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BST52,115 datasheet pdf and Transistors - Bipolar (BJT) - Single product details from Nexperia USA Inc. stock available at Feilidi
- Manufacturer: Nexperia USA Inc.
- NO: 554-BST52,115
- Package: TO-243AA
- Datasheet:
- Stock: 6202
- Description: BST52,115 datasheet pdf and Transistors - Bipolar (BJT) - Single product details from Nexperia USA Inc. stock available at Feilidi(Kg)
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| Parameters | |
|---|---|
| Factory Lead Time | 4 Weeks |
| Mounting Type | Surface Mount |
| Package / Case | TO-243AA |
| Surface Mount | YES |
| Number of Pins | 3 |
| Transistor Element Material | SILICON |
| Operating Temperature | 150°C TJ |
| Packaging | Tape & Reel (TR) |
| Published | 2001 |
| Series | Automotive, AEC-Q101 |
| JESD-609 Code | e3 |
| Part Status | Active |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
| Number of Terminations | 3 |
| ECCN Code | EAR99 |
| Terminal Finish | Tin (Sn) |
| Terminal Position | SINGLE |
| Terminal Form | FLAT |
| Peak Reflow Temperature (Cel) | NOT SPECIFIED |
| Time@Peak Reflow Temperature-Max (s) | NOT SPECIFIED |
| Base Part Number | BST52 |
| Pin Count | 3 |
| Qualification Status | Not Qualified |
| Number of Elements | 1 |
| Polarity | NPN |
| Configuration | DARLINGTON WITH BUILT-IN DIODE AND RESISTOR |
| Power Dissipation | 1.3W |
| Case Connection | COLLECTOR |
| Transistor Application | SWITCHING |
| Transistor Type | NPN - Darlington |
| Collector Emitter Voltage (VCEO) | 80V |
| Max Collector Current | 1A |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 2000 @ 500mA 10V |
| Current - Collector Cutoff (Max) | 50nA |
| Vce Saturation (Max) @ Ib, Ic | 1.3V @ 500μA, 500mA |
| Collector Emitter Breakdown Voltage | 80V |
| Transition Frequency | 200MHz |
| Collector Emitter Saturation Voltage | 1.3V |
| Frequency - Transition | 200MHz |
| Collector Base Voltage (VCBO) | 90V |
| Emitter Base Voltage (VEBO) | 5V |
| hFE Min | 1000 |
| Max Junction Temperature (Tj) | 150°C |
| Ambient Temperature Range High | 150°C |
| Turn On Time-Max (ton) | 400ns |
| Height | 1.6mm |
| RoHS Status | ROHS3 Compliant |
BST52,115 Overview
As dc = Ic/Ib, DC current gain is the ratio of base current to collector current, and DC current gain for this device is 2000 @ 500mA 10V.The collector emitter saturation voltage is 1.3V, which allows for maximum design flexibility.Vce saturation?means Ic is at its maximum value(saturated), and the vce saturation(Max) is 1.3V @ 500μA, 500mA.The emitter base voltage can be kept at 5V for high efficiency.A transition frequency of 200MHz is present in the part.When collector current reaches its maximum, it can reach 1A volts.
BST52,115 Features
the DC current gain for this device is 2000 @ 500mA 10V
a collector emitter saturation voltage of 1.3V
the vce saturation(Max) is 1.3V @ 500μA, 500mA
the emitter base voltage is kept at 5V
a transition frequency of 200MHz
BST52,115 Applications
There are a lot of Nexperia USA Inc. BST52,115 applications of single BJT transistors.
- Interface
- Inverter
- Muting
- Driver
