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BST50,115 datasheet pdf and Transistors - Bipolar (BJT) - Single product details from Nexperia USA Inc. stock available at Feilidi
- Manufacturer: Nexperia USA Inc.
- NO: 554-BST50,115
- Package: TO-243AA
- Datasheet:
- Stock: 2308
- Description: BST50,115 datasheet pdf and Transistors - Bipolar (BJT) - Single product details from Nexperia USA Inc. stock available at Feilidi(Kg)
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| Parameters | |
|---|---|
| Published | 2001 |
| Series | Automotive, AEC-Q101 |
| Part Status | Active |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -65°C |
| Max Power Dissipation | 1.3W |
| Base Part Number | BST50 |
| Number of Elements | 1 |
| Polarity | NPN |
| Element Configuration | Single |
| Power Dissipation | 1.3W |
| Power - Max | 1.3W |
| Transistor Type | NPN - Darlington |
| Collector Emitter Voltage (VCEO) | 45V |
| Max Collector Current | 1A |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 2000 @ 500mA 10V |
| Current - Collector Cutoff (Max) | 50nA |
| Vce Saturation (Max) @ Ib, Ic | 1.3V @ 500μA, 500mA |
| Collector Emitter Breakdown Voltage | 45V |
| Voltage - Collector Emitter Breakdown (Max) | 45V |
| Current - Collector (Ic) (Max) | 1A |
| Collector Emitter Saturation Voltage | 1.3V |
| Max Breakdown Voltage | 45V |
| Frequency - Transition | 200MHz |
| Collector Base Voltage (VCBO) | 60V |
| Emitter Base Voltage (VEBO) | 5V |
| Height | 1.6mm |
| Length | 4.6mm |
| Width | 2.6mm |
| Radiation Hardening | No |
| REACH SVHC | No SVHC |
| RoHS Status | ROHS3 Compliant |
| Lead Free | Lead Free |
| Factory Lead Time | 4 Weeks |
| Contact Plating | Tin |
| Mount | Surface Mount |
| Mounting Type | Surface Mount |
| Package / Case | TO-243AA |
| Number of Pins | 3 |
| Supplier Device Package | SOT-89 |
| Weight | 130.492855mg |
| Operating Temperature | 150°C TJ |
| Packaging | Tape & Reel (TR) |
BST50,115 Overview
DC current gain' is equal to the ratio of the collector current to the base current, something like Ic/Ib, and this device has 2000 @ 500mA 10V DC current gain.A collector emitter saturation voltage of 1.3V ensures maximum design flexibility.As a result of vce saturation, Ic reaches its maximum value (saturated), and vce saturation(Max) is 1.3V @ 500μA, 500mA.Emitter base voltages of 5V can achieve high levels of efficiency.Single BJT transistor can take a breakdown input voltage of 45V volts.Product comes in the supplier's device package SOT-89.A 45V maximal voltage - Collector Emitter Breakdown is present in the device.In extreme cases, the collector current can be as low as 1A volts.
BST50,115 Features
the DC current gain for this device is 2000 @ 500mA 10V
a collector emitter saturation voltage of 1.3V
the vce saturation(Max) is 1.3V @ 500μA, 500mA
the emitter base voltage is kept at 5V
the supplier device package of SOT-89
BST50,115 Applications
There are a lot of Nexperia USA Inc. BST50,115 applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
