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BSS64 datasheet pdf and Transistors - Bipolar (BJT) - Single product details from ON Semiconductor stock available at Feilidi
- Manufacturer: ON Semiconductor
- NO: 598-BSS64
- Package: TO-236-3, SC-59, SOT-23-3
- Datasheet:
- Stock: 1320
- Description: BSS64 datasheet pdf and Transistors - Bipolar (BJT) - Single product details from ON Semiconductor stock available at Feilidi(Kg)
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| Parameters | |
|---|---|
| Factory Lead Time | 39 Weeks |
| Lifecycle Status | LAST SHIPMENTS (Last Updated: 3 days ago) |
| Contact Plating | Tin |
| Mount | Surface Mount |
| Mounting Type | Surface Mount |
| Package / Case | TO-236-3, SC-59, SOT-23-3 |
| Number of Pins | 3 |
| Weight | 30mg |
| Transistor Element Material | SILICON |
| Operating Temperature | -55°C~150°C TJ |
| Packaging | Tape & Reel (TR) |
| Published | 2000 |
| JESD-609 Code | e3 |
| Pbfree Code | yes |
| Part Status | Obsolete |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
| Number of Terminations | 3 |
| ECCN Code | EAR99 |
| Subcategory | Other Transistors |
| Voltage - Rated DC | -80V |
| Max Power Dissipation | 350mW |
| Terminal Position | DUAL |
| Terminal Form | GULL WING |
| Current Rating | -200mA |
| Frequency | 60MHz |
| Base Part Number | BSS64 |
| Number of Elements | 1 |
| Element Configuration | Single |
| Power Dissipation | 350mW |
| Transistor Application | AMPLIFIER |
| Gain Bandwidth Product | 60MHz |
| Polarity/Channel Type | NPN |
| Transistor Type | NPN |
| Collector Emitter Voltage (VCEO) | 80V |
| Max Collector Current | 200mA |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 20 @ 10mA 1V |
| Current - Collector Cutoff (Max) | 100nA ICBO |
| Vce Saturation (Max) @ Ib, Ic | 200mV @ 15mA, 50mA |
| Collector Emitter Breakdown Voltage | 80V |
| Transition Frequency | 60MHz |
| Collector Emitter Saturation Voltage | 200mV |
| Max Breakdown Voltage | 80V |
| Collector Base Voltage (VCBO) | 120V |
| Emitter Base Voltage (VEBO) | 5V |
| hFE Min | 20 |
| Height | 930μm |
| Length | 2.92mm |
| Width | 1.3mm |
| Radiation Hardening | No |
| RoHS Status | ROHS3 Compliant |
| Lead Free | Lead Free |
BSS64 Overview
DC current gain' is equal to the ratio of the collector current to the base current, something like Ic/Ib, and this device has 20 @ 10mA 1V DC current gain.With a collector emitter saturation voltage of 200mV, it offers maximum design flexibility.When VCE saturation is 200mV @ 15mA, 50mA, transistor means Ic has reached transistors maximum value (saturated).Single BJT transistor is possible to achieve a high level of efficiency by maintaining the emSingle BJT transistorter base voltage at 5V.Its current rating is -200mA, which means that it can sustain a maximum current for an indefinite period of time without degrading too much.In the part, the transition frequency is 60MHz.An input voltage of 80V volts is the breakdown voltage.In extreme cases, the collector current can be as low as 200mA volts.
BSS64 Features
the DC current gain for this device is 20 @ 10mA 1V
a collector emitter saturation voltage of 200mV
the vce saturation(Max) is 200mV @ 15mA, 50mA
the emitter base voltage is kept at 5V
the current rating of this device is -200mA
a transition frequency of 60MHz
BSS64 Applications
There are a lot of ON Semiconductor BSS64 applications of single BJT transistors.
- Interface
- Driver
- Muting
- Inverter
