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BSS63LT1G datasheet pdf and Transistors - Bipolar (BJT) - Single product details from ON Semiconductor stock available at Feilidi
- Manufacturer: ON Semiconductor
- NO: 598-BSS63LT1G
- Package: TO-236-3, SC-59, SOT-23-3
- Datasheet:
- Stock: 6940
- Description: BSS63LT1G datasheet pdf and Transistors - Bipolar (BJT) - Single product details from ON Semiconductor stock available at Feilidi(Kg)
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| Parameters | |
|---|---|
| Factory Lead Time | 7 Weeks |
| Lifecycle Status | ACTIVE (Last Updated: 1 day ago) |
| Contact Plating | Tin |
| Mounting Type | Surface Mount |
| Package / Case | TO-236-3, SC-59, SOT-23-3 |
| Surface Mount | YES |
| Number of Pins | 3 |
| Transistor Element Material | SILICON |
| Operating Temperature | -55°C~150°C TJ |
| Packaging | Tape & Reel (TR) |
| Published | 2005 |
| JESD-609 Code | e3 |
| Pbfree Code | yes |
| Part Status | Active |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
| Number of Terminations | 3 |
| ECCN Code | EAR99 |
| Subcategory | Other Transistors |
| Voltage - Rated DC | -100V |
| Max Power Dissipation | 225mW |
| Terminal Position | DUAL |
| Terminal Form | GULL WING |
| Peak Reflow Temperature (Cel) | 260 |
| Current Rating | -100mA |
| Frequency | 95MHz |
| Time@Peak Reflow Temperature-Max (s) | 40 |
| Base Part Number | BSS63 |
| Pin Count | 3 |
| Number of Elements | 1 |
| Element Configuration | Single |
| Power Dissipation | 300mW |
| Power - Max | 225mW |
| Halogen Free | Halogen Free |
| Gain Bandwidth Product | 95MHz |
| Polarity/Channel Type | PNP |
| Transistor Type | PNP |
| Collector Emitter Voltage (VCEO) | 100V |
| Max Collector Current | 100mA |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 30 @ 25mA 1V |
| Current - Collector Cutoff (Max) | 100nA ICBO |
| Vce Saturation (Max) @ Ib, Ic | 250mV @ 2.5mA, 25mA |
| Collector Emitter Breakdown Voltage | 100V |
| Transition Frequency | 95MHz |
| Collector Emitter Saturation Voltage | -250mV |
| Max Breakdown Voltage | 100V |
| Collector Base Voltage (VCBO) | 110V |
| Emitter Base Voltage (VEBO) | 6V |
| hFE Min | 30 |
| Height | 1.11mm |
| Length | 3.04mm |
| Width | 1.4mm |
| Radiation Hardening | No |
| REACH SVHC | No SVHC |
| RoHS Status | ROHS3 Compliant |
| Lead Free | Lead Free |
BSS63LT1G Overview
As dc = Ic/Ib, DC current gain is the ratio of base current to collector current, and DC current gain for this device is 30 @ 25mA 1V.With a collector emitter saturation voltage of -250mV, it offers maximum design flexibility.A VCE saturation indicates a maximum value of Ic (saturation), and a maximum value of VCE saturation (Max).Emitter base voltages of 6V can achieve high levels of efficiency.The current rating of this fuse is -100mA, which means that transistor can carry an indefintransistore amount of current wtransistorhout deteriorating too much.There is a transition frequency of 95MHz in the part.An input voltage of 100V volts is the breakdown voltage.Single BJT transistor is possible for the collector current to fall as low as 100mA volts at Single BJT transistors maximum.
BSS63LT1G Features
the DC current gain for this device is 30 @ 25mA 1V
a collector emitter saturation voltage of -250mV
the vce saturation(Max) is 250mV @ 2.5mA, 25mA
the emitter base voltage is kept at 6V
the current rating of this device is -100mA
a transition frequency of 95MHz
BSS63LT1G Applications
There are a lot of ON Semiconductor BSS63LT1G applications of single BJT transistors.
- Interface
- Inverter
- Muting
- Driver
