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BSP62H6327XTSA1 datasheet pdf and Transistors - Bipolar (BJT) - Single product details from Infineon Technologies stock available at Feilidi
- Manufacturer: Infineon Technologies
- NO: 376-BSP62H6327XTSA1
- Package: TO-261-4, TO-261AA
- Datasheet:
- Stock: 7377
- Description: BSP62H6327XTSA1 datasheet pdf and Transistors - Bipolar (BJT) - Single product details from Infineon Technologies stock available at Feilidi(Kg)
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| Parameters | |
|---|---|
| RoHS Status | ROHS3 Compliant |
| Factory Lead Time | 12 Weeks |
| Mount | Surface Mount |
| Mounting Type | Surface Mount |
| Package / Case | TO-261-4, TO-261AA |
| Number of Pins | 4 |
| Transistor Element Material | SILICON |
| Operating Temperature | 150°C TJ |
| Packaging | Tape & Reel (TR) |
| Published | 2007 |
| Part Status | Discontinued |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
| Number of Terminations | 4 |
| ECCN Code | EAR99 |
| Max Power Dissipation | 1.5W |
| Terminal Position | DUAL |
| Terminal Form | GULL WING |
| Base Part Number | BSP62 |
| Number of Elements | 1 |
| Polarity | PNP |
| Element Configuration | Single |
| Case Connection | COLLECTOR |
| Power - Max | 1.5W |
| Transistor Application | SWITCHING |
| Transistor Type | PNP - Darlington |
| Collector Emitter Voltage (VCEO) | 80V |
| Max Collector Current | 1A |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 2000 @ 500mA 10V |
| Current - Collector Cutoff (Max) | 10μA |
| Vce Saturation (Max) @ Ib, Ic | 1.8V @ 1mA, 1A |
| Collector Emitter Breakdown Voltage | 80V |
| Transition Frequency | 200MHz |
| Collector Emitter Saturation Voltage | 1.8V |
| Max Breakdown Voltage | 80V |
| Frequency - Transition | 200MHz |
| Collector Base Voltage (VCBO) | 90V |
| Emitter Base Voltage (VEBO) | 5V |
| hFE Min | 1000 |
| Height | 1.6mm |
| Length | 6.5mm |
| Width | 3.5mm |
| Radiation Hardening | No |
BSP62H6327XTSA1 Overview
DC current gain' is equal to the ratio of the collector current to the base current, something like Ic/Ib, and this device has 2000 @ 500mA 10V DC current gain.The collector emitter saturation voltage is 1.8V, which allows for maximum design flexibility.Saturation of VCE means Ic is at its maximum value (saturated), and VCE saturation (Max) is 1.8V @ 1mA, 1A.The emitter base voltage can be kept at 5V for high efficiency.In the part, the transition frequency is 200MHz.This device can take an input voltage of 80V volts before it breaks down.Single BJT transistor is possible to have a collector current as low as 1A volts at Single BJT transistors maximum.
BSP62H6327XTSA1 Features
the DC current gain for this device is 2000 @ 500mA 10V
a collector emitter saturation voltage of 1.8V
the vce saturation(Max) is 1.8V @ 1mA, 1A
the emitter base voltage is kept at 5V
a transition frequency of 200MHz
BSP62H6327XTSA1 Applications
There are a lot of Infineon Technologies BSP62H6327XTSA1 applications of single BJT transistors.
- Driver
- Muting
- Interface
- Inverter
