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BSP52T3G datasheet pdf and Transistors - Bipolar (BJT) - Single product details from ON Semiconductor stock available at Feilidi
- Manufacturer: ON Semiconductor
- NO: 598-BSP52T3G
- Package: TO-261-4, TO-261AA
- Datasheet:
- Stock: 9909
- Description: BSP52T3G datasheet pdf and Transistors - Bipolar (BJT) - Single product details from ON Semiconductor stock available at Feilidi(Kg)
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| Parameters | |
|---|---|
| Factory Lead Time | 11 Weeks |
| Lifecycle Status | ACTIVE (Last Updated: 4 days ago) |
| Mounting Type | Surface Mount |
| Package / Case | TO-261-4, TO-261AA |
| Surface Mount | YES |
| Number of Pins | 4 |
| Transistor Element Material | SILICON |
| Operating Temperature | -65°C~150°C TJ |
| Packaging | Tape & Reel (TR) |
| Published | 1997 |
| JESD-609 Code | e3 |
| Pbfree Code | yes |
| Part Status | Active |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
| Number of Terminations | 4 |
| ECCN Code | EAR99 |
| Terminal Finish | Tin (Sn) |
| Subcategory | Other Transistors |
| Voltage - Rated DC | 80V |
| Max Power Dissipation | 800mW |
| Terminal Position | DUAL |
| Terminal Form | GULL WING |
| Peak Reflow Temperature (Cel) | 260 |
| Current Rating | 1A |
| Time@Peak Reflow Temperature-Max (s) | 40 |
| Base Part Number | BSP52 |
| Pin Count | 4 |
| Number of Elements | 1 |
| Polarity | NPN |
| Element Configuration | Single |
| Power Dissipation | 1.25W |
| Case Connection | COLLECTOR |
| Transistor Application | SWITCHING |
| Halogen Free | Halogen Free |
| Transistor Type | NPN - Darlington |
| Collector Emitter Voltage (VCEO) | 80V |
| Max Collector Current | 1A |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 2000 @ 500mA 10V |
| Current - Collector Cutoff (Max) | 10μA |
| Vce Saturation (Max) @ Ib, Ic | 1.3V @ 500μA, 500mA |
| Collector Emitter Breakdown Voltage | 80V |
| Collector Emitter Saturation Voltage | 1.3V |
| Max Breakdown Voltage | 80V |
| Collector Base Voltage (VCBO) | 90V |
| Emitter Base Voltage (VEBO) | 5V |
| Height | 1.57mm |
| Length | 6.5mm |
| Width | 3.5mm |
| Radiation Hardening | No |
| REACH SVHC | No SVHC |
| RoHS Status | ROHS3 Compliant |
| Lead Free | Lead Free |
BSP52T3G Overview
This device has a DC current gain of 2000 @ 500mA 10V, which is the ratio between the collector current and the base current.With a collector emitter saturation voltage of 1.3V, it offers maximum design flexibility.A VCE saturation indicates a maximum value of Ic (saturation), and a maximum value of VCE saturation (Max).The emitter base voltage can be kept at 5V for high efficiency.The current rating of this fuse is 1A, which means that transistor can carry an indefintransistore amount of current wtransistorhout deteriorating too much.The breakdown input voltage is 80V volts.Single BJT transistor is possible for the collector current to fall as low as 1A volts at Single BJT transistors maximum.
BSP52T3G Features
the DC current gain for this device is 2000 @ 500mA 10V
a collector emitter saturation voltage of 1.3V
the vce saturation(Max) is 1.3V @ 500μA, 500mA
the emitter base voltage is kept at 5V
the current rating of this device is 1A
BSP52T3G Applications
There are a lot of ON Semiconductor BSP52T3G applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
