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BSP52,115 datasheet pdf and Transistors - Bipolar (BJT) - Single product details from Nexperia USA Inc. stock available at Feilidi
- Manufacturer: Nexperia USA Inc.
- NO: 554-BSP52,115
- Package: TO-261-4, TO-261AA
- Datasheet:
- Stock: 4039
- Description: BSP52,115 datasheet pdf and Transistors - Bipolar (BJT) - Single product details from Nexperia USA Inc. stock available at Feilidi(Kg)
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| Parameters | |
|---|---|
| Factory Lead Time | 4 Weeks |
| Mounting Type | Surface Mount |
| Package / Case | TO-261-4, TO-261AA |
| Surface Mount | YES |
| Number of Pins | 3 |
| Transistor Element Material | SILICON |
| Operating Temperature | 150°C TJ |
| Packaging | Tape & Reel (TR) |
| Published | 1999 |
| Series | Automotive, AEC-Q101 |
| JESD-609 Code | e3 |
| Part Status | Active |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
| Number of Terminations | 4 |
| ECCN Code | EAR99 |
| Terminal Finish | Tin (Sn) |
| Terminal Position | DUAL |
| Terminal Form | GULL WING |
| Peak Reflow Temperature (Cel) | NOT SPECIFIED |
| Time@Peak Reflow Temperature-Max (s) | NOT SPECIFIED |
| Base Part Number | BSP52 |
| Pin Count | 4 |
| JESD-30 Code | R-PDSO-G4 |
| Qualification Status | Not Qualified |
| Number of Elements | 1 |
| Polarity | NPN |
| Configuration | DARLINGTON WITH BUILT-IN DIODE AND RESISTOR |
| Power Dissipation | 1.25W |
| Case Connection | COLLECTOR |
| Transistor Application | SWITCHING |
| Transistor Type | NPN - Darlington |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 2000 @ 500mA 10V |
| Current - Collector Cutoff (Max) | 50nA |
| Vce Saturation (Max) @ Ib, Ic | 1.3V @ 500μA, 500mA |
| Voltage - Collector Emitter Breakdown (Max) | 80V |
| Current - Collector (Ic) (Max) | 1A |
| Transition Frequency | 200MHz |
| Frequency - Transition | 200MHz |
| RoHS Status | ROHS3 Compliant |
BSP52,115 Overview
DC current gain' is equal to the ratio of the collector current to the base current, something like Ic/Ib, and this device has 2000 @ 500mA 10V DC current gain.Single BJT transistor means that Ic is at Single BJT transistors maximum value (saturated), so the vce saturation(Max) is equal to 1.3V @ 500μA, 500mA.In this part, there is a transition frequency of 200MHz.Detection of Collector Emitter Breakdown at 80V maximal voltage is present.
BSP52,115 Features
the DC current gain for this device is 2000 @ 500mA 10V
the vce saturation(Max) is 1.3V @ 500μA, 500mA
a transition frequency of 200MHz
BSP52,115 Applications
There are a lot of Nexperia USA Inc. BSP52,115 applications of single BJT transistors.
- Interface
- Inverter
- Muting
- Driver
