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ContactBSO615N
BSO615N datasheet pdf and Transistors - FETs, MOSFETs - Arrays product details from Infineon Technologies stock available at Utmel
- Manufacturer: Infineon Technologies
- NO: 376-BSO615N
- Package: 8-SOIC (0.154, 3.90mm Width)
- Datasheet:
- Stock: 2939
- Description: BSO615N datasheet pdf and Transistors - FETs, MOSFETs - Arrays product details from Infineon Technologies stock available at Utmel(Kg)
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| Parameters | |
|---|---|
| Mount | Surface Mount |
| Mounting Type | Surface Mount |
| Package / Case | 8-SOIC (0.154, 3.90mm Width) |
| Number of Pins | 8 |
| Transistor Element Material | SILICON |
| Operating Temperature | -55°C~150°C TJ |
| Packaging | Tape & Reel (TR) |
| Series | SIPMOS® |
| Published | 2000 |
| JESD-609 Code | e0 |
| Part Status | Obsolete |
| Moisture Sensitivity Level (MSL) | 3 (168 Hours) |
| Number of Terminations | 8 |
| ECCN Code | EAR99 |
| Terminal Finish | Tin/Lead (Sn/Pb) |
| Subcategory | FET General Purpose Power |
| Voltage - Rated DC | 60V |
| Max Power Dissipation | 2W |
| Terminal Form | GULL WING |
| Peak Reflow Temperature (Cel) | 235 |
| Current Rating | 2.6A |
| Time@Peak Reflow Temperature-Max (s) | NOT SPECIFIED |
| Base Part Number | BSO615 |
| Qualification Status | Not Qualified |
| Number of Elements | 2 |
| Operating Mode | ENHANCEMENT MODE |
| Power Dissipation | 2W |
| FET Type | 2 N-Channel (Dual) |
| Transistor Application | SWITCHING |
| Rds On (Max) @ Id, Vgs | 150m Ω @ 2.6A, 4.5V |
| Vgs(th) (Max) @ Id | 2V @ 20μA |
| Input Capacitance (Ciss) (Max) @ Vds | 380pF @ 25V |
| Gate Charge (Qg) (Max) @ Vgs | 20nC @ 10V |
| Rise Time | 15ns |
| Continuous Drain Current (ID) | 2.6A |
| Gate to Source Voltage (Vgs) | 20V |
| Drain-source On Resistance-Max | 0.15Ohm |
| Pulsed Drain Current-Max (IDM) | 10.4A |
| Avalanche Energy Rating (Eas) | 60 mJ |
| FET Technology | METAL-OXIDE SEMICONDUCTOR |
| FET Feature | Logic Level Gate |
| RoHS Status | Non-RoHS Compliant |
| Lead Free | Contains Lead |
