BSO330N02KGFUMA1

Trans MOSFET N-CH 20V 5.4A 8-Pin DSO


  • Manufacturer: Infineon Technologies
  • NO: 376-BSO330N02KGFUMA1
  • Package: 8-SOIC (0.154, 3.90mm Width)
  • Datasheet: pdf
  • Stock: 5248
  • Description: Trans MOSFET N-CH 20V 5.4A 8-Pin DSO(Kg)

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  • Delivery: Delivery
  • Payment: payment

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SPECIFICATIONS

Parameters
Mount Surface Mount
Mounting Type Surface Mount
Package / Case 8-SOIC (0.154, 3.90mm Width)
Number of Pins 8
Transistor Element Material SILICON
Operating Temperature -55°C~150°C TJ
Packaging Tape & Reel (TR)
Published 2008
Series OptiMOS™
Pbfree Code yes
Part Status Obsolete
Moisture Sensitivity Level (MSL) 3 (168 Hours)
Number of Terminations 8
ECCN Code EAR99
Additional Feature AVALANCHE RATED, LOGIC LEVEL COMPATIBLE
Max Power Dissipation 1.4W
Terminal Form GULL WING
Peak Reflow Temperature (Cel) NOT SPECIFIED
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Base Part Number BSO330N02
Pin Count 8
Qualification Status Not Qualified
Number of Elements 2
Operating Mode ENHANCEMENT MODE
Power Dissipation 2.5W
Turn On Delay Time 7.4 ns
FET Type 2 N-Channel (Dual)
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 30m Ω @ 6.5A, 4.5V
Vgs(th) (Max) @ Id 1.2V @ 20μA
Input Capacitance (Ciss) (Max) @ Vds 730pF @ 10V
Gate Charge (Qg) (Max) @ Vgs 4.9nC @ 4.5V
Rise Time 16.8ns
Drain to Source Voltage (Vdss) 20V
Fall Time (Typ) 2.8 ns
Turn-Off Delay Time 13.4 ns
Continuous Drain Current (ID) 5.4A
Gate to Source Voltage (Vgs) 12V
Drain-source On Resistance-Max 0.03Ohm
Avalanche Energy Rating (Eas) 19 mJ
FET Technology METAL-OXIDE SEMICONDUCTOR
FET Feature Logic Level Gate
RoHS Status RoHS Compliant

In Stock

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