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ContactBSO200N03
MOSFET 2N-CH 30V 6.6A 8DSO
- Manufacturer: Infineon Technologies
- NO: 376-BSO200N03
- Package: 8-SOIC (0.154, 3.90mm Width)
- Datasheet:
- Stock: 5517
- Description: MOSFET 2N-CH 30V 6.6A 8DSO(Kg)
- Delivery:
- Payment:
In Stock
Please send RFQ , we will respond immediately.
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Currently, our products are shipped through DHL, FedEx, SF, and UPS.
Delivery TimeOnce the goods are shipped, estimated delivery time depends on the shipping methods you chose:
FedEx International, 5-7 business days.
The following are some common countries' logistic time.
| Parameters | |
|---|---|
| Contact Plating | Tin |
| Mount | Surface Mount |
| Mounting Type | Surface Mount |
| Package / Case | 8-SOIC (0.154, 3.90mm Width) |
| Number of Pins | 8 |
| Transistor Element Material | SILICON |
| Operating Temperature | -55°C~150°C TJ |
| Packaging | Tape & Reel (TR) |
| Published | 2011 |
| Series | OptiMOS™ |
| JESD-609 Code | e3 |
| Part Status | Obsolete |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
| Number of Terminations | 8 |
| ECCN Code | EAR99 |
| Additional Feature | AVALANCHE RATED |
| Subcategory | FET General Purpose Power |
| Voltage - Rated DC | 30V |
| Max Power Dissipation | 1.4W |
| Terminal Form | GULL WING |
| Peak Reflow Temperature (Cel) | 260 |
| Current Rating | 6.6A |
| Time@Peak Reflow Temperature-Max (s) | 40 |
| Pin Count | 8 |
| Qualification Status | Not Qualified |
| Number of Elements | 2 |
| Configuration | SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE |
| Operating Mode | ENHANCEMENT MODE |
| Power Dissipation | 1.56W |
| Turn On Delay Time | 2.9 ns |
| FET Type | 2 N-Channel (Dual) |
| Transistor Application | SWITCHING |
| Rds On (Max) @ Id, Vgs | 20m Ω @ 7.9A, 10V |
| Vgs(th) (Max) @ Id | 2V @ 13μA |
| Input Capacitance (Ciss) (Max) @ Vds | 1010pF @ 15V |
| Gate Charge (Qg) (Max) @ Vgs | 8nC @ 5V |
| Rise Time | 2.6ns |
| Fall Time (Typ) | 2.6 ns |
| Turn-Off Delay Time | 12 ns |
| Continuous Drain Current (ID) | 7A |
| JEDEC-95 Code | MS-012 |
| Gate to Source Voltage (Vgs) | 20V |
| Drain-source On Resistance-Max | 0.02Ohm |
| Drain to Source Breakdown Voltage | 30V |
| FET Technology | METAL-OXIDE SEMICONDUCTOR |
| FET Feature | Logic Level Gate |
| Feedback Cap-Max (Crss) | 56 pF |
| RoHS Status | RoHS Compliant |
| Lead Free | Lead Free |
