BSM180D12P3C007

BSM180D12P3C007 datasheet pdf and Transistors - FETs, MOSFETs - Arrays product details from ROHM Semiconductor stock available at Utmel


  • Manufacturer: ROHM Semiconductor
  • NO: 687-BSM180D12P3C007
  • Package: Module
  • Datasheet: pdf
  • Stock: 8
  • Description: BSM180D12P3C007 datasheet pdf and Transistors - FETs, MOSFETs - Arrays product details from ROHM Semiconductor stock available at Utmel(Kg)

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SPECIFICATIONS

Parameters
Factory Lead Time 25 Weeks
Mounting Type Surface Mount
Package / Case Module
Surface Mount NO
Operating Temperature 175°C TJ
Packaging Bulk
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 10
ECCN Code EAR99
Subcategory FET General Purpose Power
Max Power Dissipation 880W
Terminal Position UPPER
Terminal Form UNSPECIFIED
Peak Reflow Temperature (Cel) NOT SPECIFIED
Reach Compliance Code not_compliant
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
JESD-30 Code R-XUFM-X10
Number of Elements 2
Configuration SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE
Operating Mode ENHANCEMENT MODE
Case Connection ISOLATED
FET Type 2 N-Channel (Dual)
Transistor Application SWITCHING
Vgs(th) (Max) @ Id 5.6V @ 50mA
Input Capacitance (Ciss) (Max) @ Vds 900pF @ 10V
Current - Continuous Drain (Id) @ 25°C 180A Tc
Drain to Source Voltage (Vdss) 1200V 1.2kV
Drain Current-Max (Abs) (ID) 180A
Pulsed Drain Current-Max (IDM) 360A
DS Breakdown Voltage-Min 1200V
FET Technology METAL-OXIDE SEMICONDUCTOR
FET Feature Silicon Carbide (SiC)
RoHS Status ROHS3 Compliant

In Stock

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