BSM180D12P2C101

MOSFET 2N-CH 1200V 180A MODULE


  • Manufacturer: ROHM Semiconductor
  • NO: 687-BSM180D12P2C101
  • Package: Module
  • Datasheet: pdf
  • Stock: 176
  • Description: MOSFET 2N-CH 1200V 180A MODULE(Kg)

Quantity:


  • Delivery: Delivery
  • Payment: payment

In Stock

Please send RFQ , we will respond immediately.

authentication (1) authentication (2) authentication (3) authentication (4) authentication (5) authentication (6) authentication (7) authentication (8) authentication (9)

Purchase & Inquiry

Transport

User guide

Purchase

You may place an order without registering to Chip Smart.
We strongly suggest you sign in before purchasing as you can track your order in real time.

Means of Payment

For your convenience, we accept multiple payment methods in USD, including PayPal, Credit Card, and wire transfer.

RFQ (Request for Quotations)

It is recommended to request for quotations to get the latest prices and inventories about the part.
Our sales will reply to your request by email within 24 hours.

IMPORTANT NOTICE

1. You'll receive an order information email in your inbox. (Please remember to check the spam folder if you didn't hear from us).
2. Since inventories and prices may fluctuate to some extent, the sales manager is going to reconfirm the order and let you know if there are any updates.

Shipping Cost

Shipping starts at $40, but some countries will exceed $40. For example (South Africa, Brazil, India, Pakistan, Israel, etc.)
The basic freight (for package ≤0.5kg or corresponding volume) depends on the time zone and country.

Shipping Method

Currently, our products are shipped through DHL, FedEx, SF, and UPS.

Delivery Time

Once the goods are shipped, estimated delivery time depends on the shipping methods you chose:

FedEx International, 5-7 business days.

The following are some common countries' logistic time.transport

SPECIFICATIONS

Parameters
Factory Lead Time 25 Weeks
Mount Screw
Package / Case Module
Number of Pins 10
Operating Temperature -40°C~150°C TJ
Packaging Bulk
Published 2012
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 8
Max Power Dissipation 1.13kW
Terminal Position UPPER
Terminal Form UNSPECIFIED
Peak Reflow Temperature (Cel) NOT SPECIFIED
Reach Compliance Code not_compliant
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
JESD-30 Code R-XUFM-X8
Number of Elements 2
Configuration SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE
Number of Channels 1
Operating Mode ENHANCEMENT MODE
Case Connection ISOLATED
Power - Max 1130W
FET Type 2 N-Channel (Half Bridge)
Transistor Application SWITCHING
Vgs(th) (Max) @ Id 4V @ 35.2mA
Input Capacitance (Ciss) (Max) @ Vds 23000pF @ 10V
Current - Continuous Drain (Id) @ 25°C 204A Tc
Drain to Source Voltage (Vdss) 1200V 1.2kV
Continuous Drain Current (ID) 180A
Threshold Voltage 2.7V
Gate to Source Voltage (Vgs) 22V
Pulsed Drain Current-Max (IDM) 360A
FET Technology METAL-OXIDE SEMICONDUCTOR
FET Feature Silicon Carbide (SiC)
Nominal Vgs 2.7 V
Height 21.1mm
Length 122mm
Width 45.6mm
REACH SVHC No SVHC
RoHS Status ROHS3 Compliant

In Stock

Please send RFQ , we will respond immediately.