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ContactBSD840N L6327
MOSFET 2N-CH 20V 0.88A SOT363
- Manufacturer: Infineon Technologies
- NO: 376-BSD840N L6327
- Package: 6-VSSOP, SC-88, SOT-363
- Datasheet:
- Stock: 1816
- Description: MOSFET 2N-CH 20V 0.88A SOT363(Kg)
- Delivery:
- Payment:
In Stock
Please send RFQ , we will respond immediately.
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| Parameters | |
|---|---|
| Mounting Type | Surface Mount |
| Package / Case | 6-VSSOP, SC-88, SOT-363 |
| Surface Mount | YES |
| Transistor Element Material | SILICON |
| Operating Temperature | -55°C~150°C TJ |
| Packaging | Tape & Reel (TR) |
| Published | 2011 |
| Series | OptiMOS™ |
| JESD-609 Code | e3 |
| Part Status | Obsolete |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
| Number of Terminations | 6 |
| ECCN Code | EAR99 |
| Terminal Finish | MATTE TIN |
| Additional Feature | AVALANCHE RATED, LOGIC LEVEL COMPATIBLE |
| Subcategory | FET General Purpose Power |
| Terminal Form | GULL WING |
| Peak Reflow Temperature (Cel) | 260 |
| Reach Compliance Code | compliant |
| Time@Peak Reflow Temperature-Max (s) | 40 |
| Base Part Number | BSD840 |
| Pin Count | 6 |
| JESD-30 Code | R-PDSO-G6 |
| Qualification Status | Not Qualified |
| Number of Elements | 2 |
| Configuration | SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE |
| Operating Mode | ENHANCEMENT MODE |
| Power - Max | 500mW |
| FET Type | 2 N-Channel (Dual) |
| Rds On (Max) @ Id, Vgs | 400m Ω @ 880mA, 2.5V |
| Vgs(th) (Max) @ Id | 750mV @ 1.6μA |
| Input Capacitance (Ciss) (Max) @ Vds | 78pF @ 10V |
| Current - Continuous Drain (Id) @ 25°C | 880mA |
| Gate Charge (Qg) (Max) @ Vgs | 0.26nC @ 2.5V |
| Drain to Source Voltage (Vdss) | 20V |
| Drain Current-Max (Abs) (ID) | 0.88A |
| Drain-source On Resistance-Max | 0.4Ohm |
| DS Breakdown Voltage-Min | 20V |
| FET Technology | METAL-OXIDE SEMICONDUCTOR |
| Power Dissipation-Max (Abs) | 0.5W |
| FET Feature | Logic Level Gate |
| RoHS Status | RoHS Compliant |
