BLP7G22-10,135

TRANSISTOR DRIVER LDMOS 12HVSON


  • Manufacturer: NXP Semiconductors
  • NO: 318-BLP7G22-10,135
  • Package: 12-VDFN Exposed Pad
  • Datasheet: pdf
  • Stock: 8497
  • Description: TRANSISTOR DRIVER LDMOS 12HVSON(Kg)

Quantity:


  • Delivery: Delivery
  • Payment: payment

In Stock

Please send RFQ , we will respond immediately.

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Purchase & Inquiry

Transport

User guide

Purchase

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We strongly suggest you sign in before purchasing as you can track your order in real time.

Means of Payment

For your convenience, we accept multiple payment methods in USD, including PayPal, Credit Card, and wire transfer.

RFQ (Request for Quotations)

It is recommended to request for quotations to get the latest prices and inventories about the part.
Our sales will reply to your request by email within 24 hours.

IMPORTANT NOTICE

1. You'll receive an order information email in your inbox. (Please remember to check the spam folder if you didn't hear from us).
2. Since inventories and prices may fluctuate to some extent, the sales manager is going to reconfirm the order and let you know if there are any updates.

Shipping Cost

Shipping starts at $40, but some countries will exceed $40. For example (South Africa, Brazil, India, Pakistan, Israel, etc.)
The basic freight (for package ≤0.5kg or corresponding volume) depends on the time zone and country.

Shipping Method

Currently, our products are shipped through DHL, FedEx, SF, and UPS.

Delivery Time

Once the goods are shipped, estimated delivery time depends on the shipping methods you chose:

FedEx International, 5-7 business days.

The following are some common countries' logistic time.transport

SPECIFICATIONS

Parameters
Package / Case 12-VDFN Exposed Pad
Surface Mount YES
Packaging Tape & Reel (TR)
Published 2011
Part Status Active
Moisture Sensitivity Level (MSL) 3 (168 Hours)
Voltage - Rated 65V
Subcategory FET General Purpose Power
Frequency 700MHz~2.2GHz
Base Part Number BLP7G22
Pin Count 12
Operating Temperature (Max) 150°C
Configuration Single
Operating Mode ENHANCEMENT MODE
Current - Test 110mA
Polarity/Channel Type N-CHANNEL
Transistor Type LDMOS
Gain 27dB
Power - Output 2W
FET Technology METAL-OXIDE SEMICONDUCTOR
Voltage - Test 28V
Source Url Status Check Date 2013-06-14 00:00:00
RoHS Status ROHS3 Compliant

In Stock

Please send RFQ , we will respond immediately.