BLF546,112

BLF546,112 datasheet pdf and Transistors - FETs, MOSFETs - RF product details from NXP Semiconductors stock available at Utmel


  • Manufacturer: NXP Semiconductors
  • NO: 318-BLF546,112
  • Package: -
  • Datasheet: pdf
  • Stock: 7196
  • Description: BLF546,112 datasheet pdf and Transistors - FETs, MOSFETs - RF product details from NXP Semiconductors stock available at Utmel(Kg)

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  • Payment: payment

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SPECIFICATIONS

Parameters
ECCN (US) EAR99
Channel Mode Enhancement
Number of Elements per Chip 2
Maximum Drain Source Voltage (V) 65
Maximum Gate Source Voltage (V) ±20
Maximum VSWR 10
Maximum Continuous Drain Current (A) 9
Maximum Drain Source Resistance (mOhm) 600@10V
Typical Input Capacitance @ Vds (pF) 60@28V
Typical Reverse Transfer Capacitance @ Vds (pF) 15@28V
Typical Output Capacitance @ Vds (pF) 46@28V
Typical Forward Transconductance (S) 1.7
Maximum Power Dissipation (mW) 145000
Output Power (W) 80
Typical Power Gain (dB) 13
Maximum Frequency (MHz) 500
Minimum Frequency (MHz) 100
Typical Drain Efficiency (%) 60
Minimum Operating Temperature (°C) -65
Maximum Operating Temperature (°C) 200
Supplier Package CDFM
Military No
Mounting Screw
Package Height 4.91(Max)
Package Length 24.9(Max)
Package Width 6.61(Max)
PCB changed 5
Packaging Blister
Part Status Obsolete
Pin Count 5
Configuration Dual Common Source
Channel Type N
Mode of Operation CW Class-B
RoHS Status Supplier Unconfirmed

In Stock

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