BF720T1G

BF720T1G datasheet pdf and Transistors - Bipolar (BJT) - Single product details from ON Semiconductor stock available at Feilidi


  • Manufacturer: ON Semiconductor
  • NO: 598-BF720T1G
  • Package: TO-261-4, TO-261AA
  • Datasheet: pdf
  • Stock: 6773
  • Description: BF720T1G datasheet pdf and Transistors - Bipolar (BJT) - Single product details from ON Semiconductor stock available at Feilidi(Kg)

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SPECIFICATIONS

Parameters
Factory Lead Time 8 Weeks
Lifecycle Status ACTIVE (Last Updated: 2 days ago)
Contact Plating Tin
Mounting Type Surface Mount
Package / Case TO-261-4, TO-261AA
Surface Mount YES
Number of Pins 4
Transistor Element Material SILICON
Operating Temperature -65°C~150°C TJ
Packaging Cut Tape (CT)
Published 2006
JESD-609 Code e3
Pbfree Code yes
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 4
ECCN Code EAR99
Type General Purpose
Subcategory Other Transistors
Voltage - Rated DC 300V
Max Power Dissipation 1.5W
Terminal Position DUAL
Terminal Form GULL WING
Peak Reflow Temperature (Cel) 260
Current Rating 100mA
Frequency 60MHz
Time@Peak Reflow Temperature-Max (s) 40
Base Part Number BF720
Pin Count 4
Number of Elements 1
Element Configuration Single
Power Dissipation 1.5W
Case Connection COLLECTOR
Gain Bandwidth Product 60MHz
Transistor Type NPN
Collector Emitter Voltage (VCEO) 300V
Max Collector Current 100mA
DC Current Gain (hFE) (Min) @ Ic, Vce 50 @ 25mA 20V
Current - Collector Cutoff (Max) 10nA ICBO
Vce Saturation (Max) @ Ib, Ic 600mV @ 5mA, 30mA
Collector Emitter Breakdown Voltage 300V
Transition Frequency 60MHz
Collector Emitter Saturation Voltage 600mV
Max Breakdown Voltage 300V
Collector Base Voltage (VCBO) 300V
Emitter Base Voltage (VEBO) 5V
hFE Min 50
Height 1.65mm
Length 6.7mm
Width 3.7mm
Radiation Hardening No
REACH SVHC No SVHC
RoHS Status ROHS3 Compliant
Lead Free Lead Free

BF720T1G Overview


In this device, the DC current gain is 50 @ 25mA 20V, which is calculated by taking the ratio of the base current to collector current and dividing transistor by two.As it features a collector emitter saturation voltage of 600mV, it allows for maximum design flexibility.VCE saturation indicates Ic is at maximum level (saturated), whereas vce saturation (Max) indicates there is no saturation.A high level of efficiency can be achieved if the base voltage of the emitter remains at 5V.Fuse current ratings refer to how much current the fuse can carry for an indefinite period without deteriorating too much, and this device has a current rating of 100mA.As you can see, the part has a transition frequency of 60MHz.There is a breakdown input voltage of 300V volts that it can take.A maximum collector current of 100mA volts can be achieved.

BF720T1G Features


the DC current gain for this device is 50 @ 25mA 20V
a collector emitter saturation voltage of 600mV
the vce saturation(Max) is 600mV @ 5mA, 30mA
the emitter base voltage is kept at 5V
the current rating of this device is 100mA
a transition frequency of 60MHz

BF720T1G Applications


There are a lot of ON Semiconductor BF720T1G applications of single BJT transistors.

  • Interface
  • Driver
  • Inverter
  • Muting

In Stock

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