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BF517E6327HTSA1 datasheet pdf and Transistors - Bipolar (BJT) - Single product details from Infineon Technologies stock available at Feilidi
- Manufacturer: Infineon Technologies
- NO: 376-BF517E6327HTSA1
- Package: TO-236-3, SC-59, SOT-23-3
- Datasheet:
- Stock: 7259
- Description: BF517E6327HTSA1 datasheet pdf and Transistors - Bipolar (BJT) - Single product details from Infineon Technologies stock available at Feilidi(Kg)
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| Parameters | |
|---|---|
| Factory Lead Time | 12 Weeks |
| Mount | Surface Mount |
| Mounting Type | Surface Mount |
| Package / Case | TO-236-3, SC-59, SOT-23-3 |
| Number of Pins | 3 |
| Transistor Element Material | SILICON |
| Operating Temperature | 150°C TJ |
| Packaging | Tape & Reel (TR) |
| Published | 2011 |
| Pbfree Code | yes |
| Part Status | Obsolete |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
| Number of Terminations | 3 |
| ECCN Code | EAR99 |
| Subcategory | Other Transistors |
| Max Power Dissipation | 280mW |
| Terminal Position | DUAL |
| Terminal Form | GULL WING |
| Frequency | 2.5GHz |
| Number of Elements | 1 |
| Configuration | SINGLE |
| Power Dissipation | 280mW |
| Transistor Application | AMPLIFIER |
| Polarity/Channel Type | NPN |
| Transistor Type | NPN |
| Collector Emitter Voltage (VCEO) | 15V |
| Max Collector Current | 25mA |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 40 @ 2mA 1V |
| Current - Collector Cutoff (Max) | 10μA ICBO |
| Vce Saturation (Max) @ Ib, Ic | 400mV @ 1mA, 10mA |
| Collector Emitter Breakdown Voltage | 15V |
| Current - Collector (Ic) (Max) | 25mA |
| Transition Frequency | 2000MHz |
| Collector Base Voltage (VCBO) | 20V |
| Emitter Base Voltage (VEBO) | 2.5V |
| Collector-Base Capacitance-Max | 0.75pF |
| Radiation Hardening | No |
| RoHS Status | RoHS Compliant |
BF517E6327HTSA1 Overview
As dc = Ic/Ib, DC current gain is the ratio of base current to collector current, and DC current gain for this device is 40 @ 2mA 1V.As a result of vce saturation, Ic reaches its maximum value (saturated), and vce saturation(Max) is 400mV @ 1mA, 10mA.The base voltage of the emitter can be kept at 2.5V to achieve high efficiency.There is a transition frequency of 2000MHz in the part.In extreme cases, the collector current can be as low as 25mA volts.
BF517E6327HTSA1 Features
the DC current gain for this device is 40 @ 2mA 1V
the vce saturation(Max) is 400mV @ 1mA, 10mA
the emitter base voltage is kept at 2.5V
a transition frequency of 2000MHz
BF517E6327HTSA1 Applications
There are a lot of Infineon Technologies BF517E6327HTSA1 applications of single BJT transistors.
- Interface
- Inverter
- Driver
- Muting
