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BF493SG datasheet pdf and Transistors - Bipolar (BJT) - Single product details from ON Semiconductor stock available at Feilidi
- Manufacturer: ON Semiconductor
- NO: 598-BF493SG
- Package: TO-226-3, TO-92-3 (TO-226AA)
- Datasheet:
- Stock: 2698
- Description: BF493SG datasheet pdf and Transistors - Bipolar (BJT) - Single product details from ON Semiconductor stock available at Feilidi(Kg)
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| Parameters | |
|---|---|
| Number of Pins | 3 |
| Transistor Element Material | SILICON |
| Operating Temperature | -55°C~150°C TJ |
| Packaging | Bulk |
| Published | 2007 |
| JESD-609 Code | e1 |
| Pbfree Code | yes |
| Part Status | Obsolete |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
| Number of Terminations | 3 |
| ECCN Code | EAR99 |
| Terminal Finish | Tin/Silver/Copper (Sn/Ag/Cu) |
| Subcategory | Other Transistors |
| Voltage - Rated DC | -350V |
| Max Power Dissipation | 625mW |
| Terminal Position | BOTTOM |
| Peak Reflow Temperature (Cel) | 260 |
| Current Rating | -500mA |
| Frequency | 50MHz |
| Time@Peak Reflow Temperature-Max (s) | 40 |
| Pin Count | 3 |
| Number of Elements | 1 |
| Element Configuration | Single |
| Power Dissipation | 625mW |
| Transistor Application | AMPLIFIER |
| Gain Bandwidth Product | 50MHz |
| Polarity/Channel Type | PNP |
| Transistor Type | PNP |
| Collector Emitter Voltage (VCEO) | 350V |
| Max Collector Current | 500mA |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 40 @ 10mA 10V |
| Current - Collector Cutoff (Max) | 10nA |
| Vce Saturation (Max) @ Ib, Ic | 2V @ 2mA, 20mA |
| Collector Emitter Breakdown Voltage | 350V |
| Transition Frequency | 50MHz |
| Collector Emitter Saturation Voltage | -2V |
| Collector Base Voltage (VCBO) | 350V |
| Emitter Base Voltage (VEBO) | 6V |
| hFE Min | 25 |
| Radiation Hardening | No |
| RoHS Status | RoHS Compliant |
| Lead Free | Lead Free |
| Lifecycle Status | LAST SHIPMENTS (Last Updated: 1 day ago) |
| Mounting Type | Through Hole |
| Package / Case | TO-226-3, TO-92-3 (TO-226AA) |
| Surface Mount | NO |
BF493SG Overview
As the DC current gain is the ratio of the collector current to the base current, for this device the DC current gain is 40 @ 10mA 10V.A collector emitter saturation voltage of -2V ensures maximum design flexibility.Single BJT transistor means that Ic is at Single BJT transistors maximum value (saturated), so the vce saturation(Max) is equal to 2V @ 2mA, 20mA.A high level of efficiency can be achieved if the base voltage of the emitter remains at 6V.The current rating of this fuse is -500mA, which means that transistor can carry an indefintransistore amount of current wtransistorhout deteriorating too much.There is a transition frequency of 50MHz in the part.A maximum collector current of 500mA volts can be achieved.
BF493SG Features
the DC current gain for this device is 40 @ 10mA 10V
a collector emitter saturation voltage of -2V
the vce saturation(Max) is 2V @ 2mA, 20mA
the emitter base voltage is kept at 6V
the current rating of this device is -500mA
a transition frequency of 50MHz
BF493SG Applications
There are a lot of ON Semiconductor BF493SG applications of single BJT transistors.
- Interface
- Driver
- Inverter
- Muting
