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BF422RL1G datasheet pdf and Transistors - Bipolar (BJT) - Single product details from ON Semiconductor stock available at Feilidi
- Manufacturer: ON Semiconductor
- NO: 598-BF422RL1G
- Package: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
- Datasheet:
- Stock: 2991
- Description: BF422RL1G datasheet pdf and Transistors - Bipolar (BJT) - Single product details from ON Semiconductor stock available at Feilidi(Kg)
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| Parameters | |
|---|---|
| Mount | Through Hole |
| Mounting Type | Through Hole |
| Package / Case | TO-226-3, TO-92-3 (TO-226AA) (Formed Leads) |
| Number of Pins | 3 |
| Transistor Element Material | SILICON |
| Operating Temperature | -55°C~150°C TJ |
| Packaging | Tape & Reel (TR) |
| Published | 2005 |
| JESD-609 Code | e1 |
| Part Status | Obsolete |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
| Number of Terminations | 3 |
| ECCN Code | EAR99 |
| Terminal Finish | Tin/Silver/Copper (Sn/Ag/Cu) |
| Additional Feature | EUROPEAN PART NUMBER |
| Subcategory | Other Transistors |
| Voltage - Rated DC | 250V |
| Max Power Dissipation | 830mW |
| Terminal Position | BOTTOM |
| Peak Reflow Temperature (Cel) | 260 |
| Current Rating | 50mA |
| Frequency | 60MHz |
| Time@Peak Reflow Temperature-Max (s) | 40 |
| Base Part Number | BF422 |
| Pin Count | 3 |
| Qualification Status | Not Qualified |
| Number of Elements | 1 |
| Element Configuration | Single |
| Power Dissipation | 830mW |
| Transistor Application | AMPLIFIER |
| Gain Bandwidth Product | 60MHz |
| Polarity/Channel Type | NPN |
| Transistor Type | NPN |
| Collector Emitter Voltage (VCEO) | 250V |
| Max Collector Current | 50mA |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 50 @ 25mA 20V |
| Vce Saturation (Max) @ Ib, Ic | 500mV @ 2mA, 20mA |
| Collector Emitter Breakdown Voltage | 250V |
| Transition Frequency | 60MHz |
| Collector Emitter Saturation Voltage | 500mV |
| Collector Base Voltage (VCBO) | 250V |
| Emitter Base Voltage (VEBO) | 5V |
| hFE Min | 50 |
| RoHS Status | RoHS Compliant |
| Lead Free | Lead Free |
BF422RL1G Overview
DC current gain in this device equals 50 @ 25mA 20V, which is the ratio of the base current to the collector current.Single BJT transistor offers maximum design flexibilSingle BJT transistory wSingle BJT transistorh a collector emSingle BJT transistorter saturation voltage of 500mV.Vce saturation?means Ic is at its maximum value(saturated), and the vce saturation(Max) is 500mV @ 2mA, 20mA.A high level of efficiency can be achieved if the base voltage of the emitter remains at 5V.The current rating of this fuse is 50mA, which means that transistor can carry an indefintransistore amount of current wtransistorhout deteriorating too much.There is a transition frequency of 60MHz in the part.The maximum collector current is 50mA volts.
BF422RL1G Features
the DC current gain for this device is 50 @ 25mA 20V
a collector emitter saturation voltage of 500mV
the vce saturation(Max) is 500mV @ 2mA, 20mA
the emitter base voltage is kept at 5V
the current rating of this device is 50mA
a transition frequency of 60MHz
BF422RL1G Applications
There are a lot of ON Semiconductor BF422RL1G applications of single BJT transistors.
- Interface
- Inverter
- Muting
- Driver
