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BDX54C datasheet pdf and Transistors - Bipolar (BJT) - Single product details from ON Semiconductor stock available at Feilidi
- Manufacturer: ON Semiconductor
- NO: 598-BDX54C
- Package: TO-220-3
- Datasheet:
- Stock: 217
- Description: BDX54C datasheet pdf and Transistors - Bipolar (BJT) - Single product details from ON Semiconductor stock available at Feilidi(Kg)
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| Parameters | |
|---|---|
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -65°C |
| Voltage - Rated DC | -100V |
| Max Power Dissipation | 65W |
| Current Rating | -8A |
| Base Part Number | BDX54 |
| Number of Elements | 1 |
| Polarity | PNP |
| Element Configuration | Single |
| Power Dissipation | 60W |
| Power - Max | 65W |
| Transistor Type | PNP - Darlington |
| Collector Emitter Voltage (VCEO) | 100V |
| Max Collector Current | 8A |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 750 @ 3A 3V |
| Current - Collector Cutoff (Max) | 500μA |
| Vce Saturation (Max) @ Ib, Ic | 2V @ 12mA, 3A |
| Collector Emitter Breakdown Voltage | 100V |
| Voltage - Collector Emitter Breakdown (Max) | 100V |
| Current - Collector (Ic) (Max) | 8A |
| Collector Emitter Saturation Voltage | 2V |
| Max Breakdown Voltage | 100V |
| Collector Base Voltage (VCBO) | -100V |
| Emitter Base Voltage (VEBO) | -5V |
| hFE Min | 750 |
| Continuous Collector Current | -8A |
| Height | 6.35mm |
| Length | 6.35mm |
| Width | 6.35mm |
| Radiation Hardening | No |
| REACH SVHC | No SVHC |
| RoHS Status | Non-RoHS Compliant |
| Lead Free | Lead Free |
| Factory Lead Time | 6 Weeks |
| Contact Plating | Tin |
| Mount | Through Hole |
| Mounting Type | Through Hole |
| Package / Case | TO-220-3 |
| Number of Pins | 3 |
| Supplier Device Package | TO-220AB |
| Weight | 1.8g |
| Operating Temperature | -65°C~150°C TJ |
| Packaging | Tube |
| Published | 2007 |
| Part Status | Obsolete |
BDX54C Overview
In this device, the DC current gain is 750 @ 3A 3V, which is calculated by taking the ratio of the base current to collector current and dividing transistor by two.The collector emitter saturation voltage is 2V, which allows for maximum design flexibility.A VCE saturation indicates a maximum value of Ic (saturation), and a maximum value of VCE saturation (Max).Continuous collector voltage should be kept at -8A for high efficiency.Keeping the emitter base voltage at -5V allows for a high level of efficiency.Its current rating is -8A, which means that it can sustain a maximum current for an indefinite period of time without degrading too much.Input voltage breakdown is available at 100V volts.This product comes in a TO-220AB device package from the supplier.This device displays a 100V maximum voltage - Collector Emitter Breakdown.In extreme cases, the collector current can be as low as 8A volts.
BDX54C Features
the DC current gain for this device is 750 @ 3A 3V
a collector emitter saturation voltage of 2V
the vce saturation(Max) is 2V @ 12mA, 3A
the emitter base voltage is kept at -5V
the current rating of this device is -8A
the supplier device package of TO-220AB
BDX54C Applications
There are a lot of ON Semiconductor BDX54C applications of single BJT transistors.
- Muting
- Driver
- Interface
- Inverter
