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BDX33B datasheet pdf and Transistors - Bipolar (BJT) - Single product details from ON Semiconductor stock available at Feilidi
- Manufacturer: ON Semiconductor
- NO: 598-BDX33B
- Package: TO-220-3
- Datasheet:
- Stock: 853
- Description: BDX33B datasheet pdf and Transistors - Bipolar (BJT) - Single product details from ON Semiconductor stock available at Feilidi(Kg)
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| Parameters | |
|---|---|
| Lifecycle Status | LAST SHIPMENTS (Last Updated: 3 days ago) |
| Mount | Through Hole |
| Mounting Type | Through Hole |
| Package / Case | TO-220-3 |
| Number of Pins | 3 |
| Weight | 1.8g |
| Transistor Element Material | SILICON |
| Operating Temperature | -65°C~150°C TJ |
| Packaging | Tube |
| Published | 2007 |
| JESD-609 Code | e0 |
| Pbfree Code | no |
| Part Status | Obsolete |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
| Number of Terminations | 3 |
| ECCN Code | EAR99 |
| Terminal Finish | Tin/Lead (Sn/Pb) |
| Additional Feature | LEADFORM OPTIONS ARE AVAILABLE |
| Subcategory | Other Transistors |
| Voltage - Rated DC | 80V |
| Max Power Dissipation | 70W |
| Peak Reflow Temperature (Cel) | 240 |
| Reach Compliance Code | not_compliant |
| Current Rating | 10A |
| Time@Peak Reflow Temperature-Max (s) | 30 |
| Base Part Number | BDX33 |
| Pin Count | 3 |
| Qualification Status | Not Qualified |
| Number of Elements | 1 |
| Polarity | NPN |
| Element Configuration | Single |
| Power Dissipation | 70W |
| Case Connection | COLLECTOR |
| Transistor Application | SWITCHING |
| Transistor Type | NPN - Darlington |
| Collector Emitter Voltage (VCEO) | 80V |
| Max Collector Current | 10A |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 750 @ 3A 3V |
| Current - Collector Cutoff (Max) | 500μA |
| JEDEC-95 Code | TO-220AB |
| Vce Saturation (Max) @ Ib, Ic | 2.5V @ 6mA, 3A |
| Collector Emitter Breakdown Voltage | 80V |
| Transition Frequency | 3MHz |
| Collector Emitter Saturation Voltage | 2.5V |
| Max Breakdown Voltage | 80V |
| Collector Base Voltage (VCBO) | 80V |
| Emitter Base Voltage (VEBO) | 5V |
| hFE Min | 750 |
| Continuous Collector Current | 10A |
| RoHS Status | Non-RoHS Compliant |
| Lead Free | Lead Free |
BDX33B Overview
As the DC current gain is the ratio of the collector current to the base current, for this device the DC current gain is 750 @ 3A 3V.As it features a collector emitter saturation voltage of 2.5V, it allows for maximum design flexibility.A VCE saturation (Max) of 2.5V @ 6mA, 3A means Ic has reached its maximum value(saturated).Continuous collector voltage should be kept at 10A for high efficiency.A high level of efficiency can be achieved if the base voltage of the emitter remains at 5V.As defined by current rating, the maximum current a fuse can carry without deteriorating too much is 10A for this device.The part has a transition frequency of 3MHz.A breakdown input voltage of 80V volts can be used.Maximum collector currents can be below 10A volts.
BDX33B Features
the DC current gain for this device is 750 @ 3A 3V
a collector emitter saturation voltage of 2.5V
the vce saturation(Max) is 2.5V @ 6mA, 3A
the emitter base voltage is kept at 5V
the current rating of this device is 10A
a transition frequency of 3MHz
BDX33B Applications
There are a lot of ON Semiconductor BDX33B applications of single BJT transistors.
- Interface
- Inverter
- Muting
- Driver
