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BDT61A-S datasheet pdf and Transistors - Bipolar (BJT) - Single product details from Bourns Inc. stock available at Feilidi
- Manufacturer: Bourns Inc.
- NO: 103-BDT61A-S
- Package: TO-220-3
- Datasheet:
- Stock: 9796
- Description: BDT61A-S datasheet pdf and Transistors - Bipolar (BJT) - Single product details from Bourns Inc. stock available at Feilidi(Kg)
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| Parameters | |
|---|---|
| Mount | Through Hole |
| Mounting Type | Through Hole |
| Package / Case | TO-220-3 |
| Transistor Element Material | SILICON |
| Operating Temperature | -65°C~150°C TJ |
| Packaging | Tube |
| Published | 1993 |
| JESD-609 Code | e1 |
| Pbfree Code | yes |
| Part Status | Obsolete |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
| Number of Terminations | 3 |
| ECCN Code | EAR99 |
| Terminal Finish | TIN SILVER COPPER |
| Max Power Dissipation | 2W |
| Base Part Number | BDT61 |
| Pin Count | 3 |
| JESD-30 Code | R-PSFM-T3 |
| Number of Elements | 1 |
| Polarity | NPN |
| Element Configuration | Single |
| Case Connection | COLLECTOR |
| Power - Max | 2W |
| Transistor Application | SWITCHING |
| Transistor Type | NPN - Darlington |
| Collector Emitter Voltage (VCEO) | 80V |
| Max Collector Current | 4A |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 750 @ 1.5A 3V |
| Current - Collector Cutoff (Max) | 500μA |
| JEDEC-95 Code | TO-220AB |
| Vce Saturation (Max) @ Ib, Ic | 2.5V @ 6mA, 1.5A |
| Collector Emitter Breakdown Voltage | 80V |
| Collector Emitter Saturation Voltage | 2.5V |
| Collector Base Voltage (VCBO) | 80V |
| Emitter Base Voltage (VEBO) | 5V |
| hFE Min | 750 |
| Radiation Hardening | No |
| RoHS Status | ROHS3 Compliant |
BDT61A-S Overview
This device has a DC current gain of 750 @ 1.5A 3V, which is the ratio between the base current and the collector current.As it features a collector emitter saturation voltage of 2.5V, it allows for maximum design flexibility.Saturation of VC means the Ic value is at its maximum, so vce saturation (Max) is 2.5V @ 6mA, 1.5A.An emitter's base voltage can be kept at 5V to gain high efficiency.Single BJT transistor is possible to have a collector current as low as 4A volts at Single BJT transistors maximum.
BDT61A-S Features
the DC current gain for this device is 750 @ 1.5A 3V
a collector emitter saturation voltage of 2.5V
the vce saturation(Max) is 2.5V @ 6mA, 1.5A
the emitter base voltage is kept at 5V
BDT61A-S Applications
There are a lot of Bourns Inc. BDT61A-S applications of single BJT transistors.
- Muting
- Inverter
- Interface
- Driver
