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BDP948H6327XTSA1
  • BDP948H6327XTSA1

BDP948H6327XTSA1

BDP948H6327XTSA1 datasheet pdf and Transistors - Bipolar (BJT) - Single product details from Infineon Technologies stock available at Feilidi


  • Manufacturer: Infineon Technologies
  • NO: 376-BDP948H6327XTSA1
  • Package: TO-261-4, TO-261AA
  • Datasheet: pdf
  • Stock: 1399
  • Description: BDP948H6327XTSA1 datasheet pdf and Transistors - Bipolar (BJT) - Single product details from Infineon Technologies stock available at Feilidi(Kg)

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SPECIFICATIONS

Parameters
Factory Lead Time 26 Weeks
Contact Plating Tin
Mount Surface Mount
Mounting Type Surface Mount
Package / Case TO-261-4, TO-261AA
Number of Pins 4
Transistor Element Material SILICON
Operating Temperature 150°C TJ
Packaging Tape & Reel (TR)
Published 2011
Part Status Discontinued
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 4
ECCN Code EAR99
Max Power Dissipation 5W
Terminal Position DUAL
Terminal Form GULL WING
Frequency 100MHz
Base Part Number BDP948
Number of Elements 1
Element Configuration Single
Power Dissipation 5W
Case Connection COLLECTOR
Transistor Application AMPLIFIER
Polarity/Channel Type PNP
Transistor Type PNP
Collector Emitter Voltage (VCEO) 500mV
Max Collector Current 3A
DC Current Gain (hFE) (Min) @ Ic, Vce 85 @ 500mA 1V
Current - Collector Cutoff (Max) 100nA ICBO
Vce Saturation (Max) @ Ib, Ic 500mV @ 200mA, 2A
Collector Emitter Breakdown Voltage 45V
Transition Frequency 100MHz
Collector Emitter Saturation Voltage 500mV
Max Breakdown Voltage 45V
Collector Base Voltage (VCBO) 45V
Emitter Base Voltage (VEBO) 5V
Height 1.6mm
Length 6.5mm
Width 3.5mm
Radiation Hardening No
RoHS Status ROHS3 Compliant

BDP948H6327XTSA1 Overview


In this device, the DC current gain is 85 @ 500mA 1V, which is calculated by taking the ratio of the base current to collector current and dividing transistor by two.The collector emitter saturation voltage is 500mV, giving you a wide variety of design options.When VCE saturation is 500mV @ 200mA, 2A, transistor means Ic has reached transistors maximum value (saturated).With the emitter base voltage set at 5V, an efficient operation can be achieved.There is a transition frequency of 100MHz in the part.This device can take an input voltage of 45V volts before it breaks down.In extreme cases, the collector current can be as low as 3A volts.

BDP948H6327XTSA1 Features


the DC current gain for this device is 85 @ 500mA 1V
a collector emitter saturation voltage of 500mV
the vce saturation(Max) is 500mV @ 200mA, 2A
the emitter base voltage is kept at 5V
a transition frequency of 100MHz

BDP948H6327XTSA1 Applications


There are a lot of Infineon Technologies BDP948H6327XTSA1 applications of single BJT transistors.

  • Inverter
  • Muting
  • Interface
  • Driver
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