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ContactBDP947E6327HTSA1
BDP947E6327HTSA1 datasheet pdf and Transistors - Bipolar (BJT) - Single product details from Infineon Technologies stock available at Feilidi
- Manufacturer: Infineon Technologies
- NO: 376-BDP947E6327HTSA1
- Package: TO-261-4, TO-261AA
- Datasheet:
- Stock: 681
- Description: BDP947E6327HTSA1 datasheet pdf and Transistors - Bipolar (BJT) - Single product details from Infineon Technologies stock available at Feilidi(Kg)
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| Parameters | |
|---|---|
| Mounting Type | Surface Mount |
| Package / Case | TO-261-4, TO-261AA |
| Operating Temperature | 150°C TJ |
| Packaging | Tape & Reel (TR) |
| Published | 2011 |
| Part Status | Obsolete |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
| ECCN Code | EAR99 |
| Peak Reflow Temperature (Cel) | NOT SPECIFIED |
| Reach Compliance Code | compliant |
| Time@Peak Reflow Temperature-Max (s) | NOT SPECIFIED |
| Base Part Number | BDP947 |
| Power - Max | 5W |
| Transistor Type | NPN |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 100 @ 500mA 1V |
| Current - Collector Cutoff (Max) | 100nA ICBO |
| Vce Saturation (Max) @ Ib, Ic | 500mV @ 200mA, 2A |
| Voltage - Collector Emitter Breakdown (Max) | 45V |
| Current - Collector (Ic) (Max) | 3A |
| Frequency - Transition | 100MHz |
| RoHS Status | RoHS Compliant |
BDP947E6327HTSA1 Overview
The DC current gain is the ratio of the base current to the collector current βdc = Ic/Ib and the DC current gain for this device is 100 @ 500mA 1V.As a result of vce saturation, Ic reaches its maximum value (saturated), and vce saturation(Max) is 500mV @ 200mA, 2A.Detection of Collector Emitter Breakdown at 45V maximal voltage is present.
BDP947E6327HTSA1 Features
the DC current gain for this device is 100 @ 500mA 1V
the vce saturation(Max) is 500mV @ 200mA, 2A
BDP947E6327HTSA1 Applications
There are a lot of Infineon Technologies BDP947E6327HTSA1 applications of single BJT transistors.
- Muting
- Driver
- Inverter
- Interface
