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BD680ASTU datasheet pdf and Transistors - Bipolar (BJT) - Single product details from ON Semiconductor stock available at Feilidi
- Manufacturer: ON Semiconductor
- NO: 598-BD680ASTU
- Package: TO-225AA, TO-126-3
- Datasheet:
- Stock: 9063
- Description: BD680ASTU datasheet pdf and Transistors - Bipolar (BJT) - Single product details from ON Semiconductor stock available at Feilidi(Kg)
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| Parameters | |
|---|---|
| Mount | Through Hole |
| Mounting Type | Through Hole |
| Package / Case | TO-225AA, TO-126-3 |
| Number of Pins | 3 |
| Weight | 761mg |
| Transistor Element Material | SILICON |
| Operating Temperature | 150°C TJ |
| Packaging | Tube |
| Published | 2002 |
| JESD-609 Code | e3 |
| Pbfree Code | yes |
| Part Status | Obsolete |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
| Number of Terminations | 3 |
| ECCN Code | EAR99 |
| Subcategory | Other Transistors |
| Voltage - Rated DC | -80V |
| Max Power Dissipation | 14W |
| Current Rating | -4A |
| Base Part Number | BD680 |
| Number of Elements | 1 |
| Polarity | PNP |
| Element Configuration | Single |
| Power Dissipation | 14W |
| Transistor Application | SWITCHING |
| Transistor Type | PNP - Darlington |
| Collector Emitter Voltage (VCEO) | 80V |
| Max Collector Current | 4A |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 750 @ 2A 3V |
| Current - Collector Cutoff (Max) | 500μA |
| Vce Saturation (Max) @ Ib, Ic | 2.8V @ 40mA, 2A |
| Collector Emitter Breakdown Voltage | 80V |
| Collector Emitter Saturation Voltage | 2.8V |
| Collector Base Voltage (VCBO) | -80V |
| Emitter Base Voltage (VEBO) | -5V |
| hFE Min | 750 |
| Continuous Collector Current | -4A |
| Height | 11mm |
| Length | 8mm |
| Width | 3.25mm |
| Radiation Hardening | No |
| RoHS Status | ROHS3 Compliant |
| Lead Free | Lead Free |
| Factory Lead Time | 20 Weeks |
| Lifecycle Status | LAST SHIPMENTS (Last Updated: 2 days ago) |
| Contact Plating | Tin |
BD680ASTU Overview
As the DC current gain is the ratio of the collector current to the base current, for this device the DC current gain is 750 @ 2A 3V.Single BJT transistor offers maximum design flexibilSingle BJT transistory wSingle BJT transistorh a collector emSingle BJT transistorter saturation voltage of 2.8V.VCE saturation indicates Ic is at maximum level (saturated), whereas vce saturation (Max) indicates there is no saturation.Continuous collector voltages should be kept at -4A to achieve high efficiency.An emitter's base voltage can be kept at -5V to gain high efficiency.This device has a current rating of -4A which corresponds to the maximum current it can carry for an indefinite period without deteriorating too much.During maximum operation, collector current can be as low as 4A volts.
BD680ASTU Features
the DC current gain for this device is 750 @ 2A 3V
a collector emitter saturation voltage of 2.8V
the vce saturation(Max) is 2.8V @ 40mA, 2A
the emitter base voltage is kept at -5V
the current rating of this device is -4A
BD680ASTU Applications
There are a lot of ON Semiconductor BD680ASTU applications of single BJT transistors.
- Interface
- Muting
- Inverter
- Driver
