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BD676 datasheet pdf and Transistors - Bipolar (BJT) - Single product details from ON Semiconductor stock available at Feilidi
- Manufacturer: ON Semiconductor
- NO: 598-BD676
- Package: TO-225AA, TO-126-3
- Datasheet:
- Stock: 5103
- Description: BD676 datasheet pdf and Transistors - Bipolar (BJT) - Single product details from ON Semiconductor stock available at Feilidi(Kg)
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| Parameters | |
|---|---|
| Lifecycle Status | LAST SHIPMENTS (Last Updated: 3 days ago) |
| Mounting Type | Through Hole |
| Package / Case | TO-225AA, TO-126-3 |
| Number of Pins | 3 |
| Supplier Device Package | TO-225AA |
| Operating Temperature | -55°C~150°C TJ |
| Packaging | Bulk |
| Published | 2008 |
| Part Status | Obsolete |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Voltage - Rated DC | -45V |
| Max Power Dissipation | 40W |
| Current Rating | -4A |
| Base Part Number | BD676 |
| Number of Elements | 1 |
| Polarity | PNP |
| Element Configuration | Single |
| Power Dissipation | 40W |
| Power - Max | 40W |
| Transistor Type | PNP - Darlington |
| Collector Emitter Voltage (VCEO) | 45V |
| Max Collector Current | 4A |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 750 @ 1.5A 3V |
| Current - Collector Cutoff (Max) | 500μA |
| Vce Saturation (Max) @ Ib, Ic | 2.5V @ 30mA, 1.5A |
| Collector Emitter Breakdown Voltage | 45V |
| Voltage - Collector Emitter Breakdown (Max) | 45V |
| Current - Collector (Ic) (Max) | 4A |
| Collector Base Voltage (VCBO) | 45V |
| Emitter Base Voltage (VEBO) | 5V |
| hFE Min | 750 |
| Continuous Collector Current | 4A |
| RoHS Status | Non-RoHS Compliant |
| Lead Free | Contains Lead |
BD676 Overview
As explained above, DC current gain takes into account the rate at which the base current flows through the collector current; therefore, DC current gain for this device is 750 @ 1.5A 3V.A VCE saturation indicates a maximum value of Ic (saturation), and a maximum value of VCE saturation (Max).In order to achieve high efficiency, the continuous collector voltage should be kept at 4A.Single BJT transistor is possible to achieve a high level of efficiency by maintaining the emSingle BJT transistorter base voltage at 5V.Its current rating is -4A, which means that it can sustain a maximum current for an indefinite period of time without degrading too much.The product comes in the supplier device package of TO-225AA.Single BJT transistor shows a 45V maximal voltage - Collector EmSingle BJT transistorter Breakdown.During maximum operation, collector current can be as low as 4A volts.
BD676 Features
the DC current gain for this device is 750 @ 1.5A 3V
the vce saturation(Max) is 2.5V @ 30mA, 1.5A
the emitter base voltage is kept at 5V
the current rating of this device is -4A
the supplier device package of TO-225AA
BD676 Applications
There are a lot of ON Semiconductor BD676 applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
