BD442

BD442 datasheet pdf and Transistors - Bipolar (BJT) - Single product details from STMicroelectronics stock available at Feilidi


  • Manufacturer: STMicroelectronics
  • NO: 761-BD442
  • Package: TO-225AA, TO-126-3
  • Datasheet: pdf
  • Stock: 1145
  • Description: BD442 datasheet pdf and Transistors - Bipolar (BJT) - Single product details from STMicroelectronics stock available at Feilidi(Kg)

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SPECIFICATIONS

Parameters
Contact Plating Tin
Mount Through Hole
Mounting Type Through Hole
Package / Case TO-225AA, TO-126-3
Number of Pins 3
Transistor Element Material SILICON
Operating Temperature 150°C TJ
Packaging Tube
JESD-609 Code e3
Pbfree Code yes
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
ECCN Code EAR99
Subcategory Other Transistors
Max Power Dissipation 36W
Frequency 3MHz
Base Part Number BD442
Pin Count 3
Number of Elements 1
Element Configuration Single
Power Dissipation 36W
Case Connection ISOLATED
Transistor Application SWITCHING
Polarity/Channel Type PNP
Transistor Type PNP
Collector Emitter Voltage (VCEO) 80V
Max Collector Current 4A
DC Current Gain (hFE) (Min) @ Ic, Vce 40 @ 500mA 1V
Current - Collector Cutoff (Max) 100μA
Vce Saturation (Max) @ Ib, Ic 800mV @ 200mA, 2A
Collector Emitter Breakdown Voltage 80V
Transition Frequency 3MHz
Collector Emitter Saturation Voltage 800mV
Collector Base Voltage (VCBO) 80V
Emitter Base Voltage (VEBO) 5V
VCEsat-Max 0.8 V
Height 10.8mm
Length 7.8mm
Width 2.7mm
Radiation Hardening No
RoHS Status ROHS3 Compliant

BD442 Overview


DC current gain in this device equals 40 @ 500mA 1V, which is the ratio of the base current to the collector current.With a collector emitter saturation voltage of 800mV, it offers maximum design flexibility.VCE saturation indicates Ic is at maximum level (saturated), whereas vce saturation (Max) indicates there is no saturation.A high level of efficiency can be achieved if the base voltage of the emitter remains at 5V.In the part, the transition frequency is 3MHz.A maximum collector current of 4A volts is possible.

BD442 Features


the DC current gain for this device is 40 @ 500mA 1V
a collector emitter saturation voltage of 800mV
the vce saturation(Max) is 800mV @ 200mA, 2A
the emitter base voltage is kept at 5V
a transition frequency of 3MHz

BD442 Applications


There are a lot of STMicroelectronics BD442 applications of single BJT transistors.

  • Interface
  • Inverter
  • Driver
  • Muting

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