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BD440G datasheet pdf and Transistors - Bipolar (BJT) - Single product details from ON Semiconductor stock available at Feilidi
- Manufacturer: ON Semiconductor
- NO: 598-BD440G
- Package: TO-225AA, TO-126-3
- Datasheet:
- Stock: 8807
- Description: BD440G datasheet pdf and Transistors - Bipolar (BJT) - Single product details from ON Semiconductor stock available at Feilidi(Kg)
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| Parameters | |
|---|---|
| Lifecycle Status | LAST SHIPMENTS (Last Updated: 1 day ago) |
| Contact Plating | Tin |
| Mounting Type | Through Hole |
| Package / Case | TO-225AA, TO-126-3 |
| Surface Mount | NO |
| Number of Pins | 3 |
| Transistor Element Material | SILICON |
| Operating Temperature | -55°C~150°C TJ |
| Packaging | Bulk |
| Published | 2005 |
| JESD-609 Code | e3 |
| Pbfree Code | yes |
| Part Status | Obsolete |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
| Number of Terminations | 3 |
| ECCN Code | EAR99 |
| Subcategory | Other Transistors |
| Voltage - Rated DC | -60V |
| Max Power Dissipation | 36W |
| Peak Reflow Temperature (Cel) | 260 |
| Current Rating | -4A |
| Frequency | 3MHz |
| Time@Peak Reflow Temperature-Max (s) | 40 |
| Base Part Number | BD440 |
| Pin Count | 3 |
| Number of Elements | 1 |
| Element Configuration | Single |
| Power Dissipation | 36W |
| Transistor Application | SWITCHING |
| Gain Bandwidth Product | 3MHz |
| Polarity/Channel Type | PNP |
| Transistor Type | PNP |
| Collector Emitter Voltage (VCEO) | 60V |
| Max Collector Current | 4A |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 40 @ 500mA 1V |
| Current - Collector Cutoff (Max) | 100μA ICBO |
| Vce Saturation (Max) @ Ib, Ic | 800mV @ 300mA, 3A |
| Collector Emitter Breakdown Voltage | 60V |
| Transition Frequency | 3MHz |
| Collector Emitter Saturation Voltage | 800mV |
| Collector Base Voltage (VCBO) | 60V |
| Emitter Base Voltage (VEBO) | 5V |
| hFE Min | 20 |
| Radiation Hardening | No |
| RoHS Status | RoHS Compliant |
| Lead Free | Lead Free |
BD440G Overview
This device has a DC current gain of 40 @ 500mA 1V, which is the ratio between the base current and the collector current.This system offers maximum design flexibility due to a collector emitter saturation voltage of 800mV.A VCE saturation (Max) of 800mV @ 300mA, 3A means Ic has reached its maximum value(saturated).A high level of efficiency can be achieved if the base voltage of the emitter remains at 5V.As defined by current rating, the maximum current a fuse can carry without deteriorating too much is -4A for this device.In the part, the transition frequency is 3MHz.When collector current reaches its maximum, it can reach 4A volts.
BD440G Features
the DC current gain for this device is 40 @ 500mA 1V
a collector emitter saturation voltage of 800mV
the vce saturation(Max) is 800mV @ 300mA, 3A
the emitter base voltage is kept at 5V
the current rating of this device is -4A
a transition frequency of 3MHz
BD440G Applications
There are a lot of ON Semiconductor BD440G applications of single BJT transistors.
- Interface
- Driver
- Inverter
- Muting
