BD436T

BD436T datasheet pdf and Transistors - Bipolar (BJT) - Single product details from ON Semiconductor stock available at Feilidi


  • Manufacturer: ON Semiconductor
  • NO: 598-BD436T
  • Package: TO-225AA, TO-126-3
  • Datasheet: pdf
  • Stock: 2054
  • Description: BD436T datasheet pdf and Transistors - Bipolar (BJT) - Single product details from ON Semiconductor stock available at Feilidi(Kg)

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SPECIFICATIONS

Parameters
Lifecycle Status LAST SHIPMENTS (Last Updated: 1 week ago)
Mounting Type Through Hole
Package / Case TO-225AA, TO-126-3
Surface Mount NO
Number of Pins 3
Transistor Element Material SILICON
Operating Temperature -55°C~150°C TJ
Packaging Tube
Published 2005
JESD-609 Code e0
Pbfree Code no
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
ECCN Code EAR99
Terminal Finish Tin/Lead (Sn/Pb)
Subcategory Other Transistors
Voltage - Rated DC -32V
Max Power Dissipation 36W
Terminal Position SINGLE
Peak Reflow Temperature (Cel) 240
Reach Compliance Code not_compliant
Current Rating -4A
Time@Peak Reflow Temperature-Max (s) 30
Base Part Number BD436
Pin Count 3
Qualification Status Not Qualified
Number of Elements 1
Configuration SINGLE
Transistor Application SWITCHING
Gain Bandwidth Product 3MHz
Polarity/Channel Type PNP
Transistor Type PNP
Collector Emitter Voltage (VCEO) 500mV
Max Collector Current 4A
DC Current Gain (hFE) (Min) @ Ic, Vce 85 @ 500mA 1V
Current - Collector Cutoff (Max) 100μA ICBO
Vce Saturation (Max) @ Ib, Ic 500mV @ 200mA, 2A
Collector Emitter Breakdown Voltage 32V
Current - Collector (Ic) (Max) 4A
Transition Frequency 3MHz
Collector Emitter Saturation Voltage 500mV
Collector Base Voltage (VCBO) 32V
Emitter Base Voltage (VEBO) 5V
hFE Min 40
RoHS Status Non-RoHS Compliant
Lead Free Contains Lead

BD436T Overview


DC current gain' is equal to the ratio of the collector current to the base current, something like Ic/Ib, and this device has 85 @ 500mA 1V DC current gain.Single BJT transistor offers maximum design flexibilSingle BJT transistory wSingle BJT transistorh a collector emSingle BJT transistorter saturation voltage of 500mV.Saturation of VC means the Ic value is at its maximum, so vce saturation (Max) is 500mV @ 200mA, 2A.The base voltage of the emitter can be kept at 5V to achieve high efficiency.A fuse's current rating indicates how much current it will be able to carry over an indefinite period, and this device has a current rating of (-4A).A transition frequency of 3MHz is present in the part.Collector current can be as low as 4A volts at its maximum.

BD436T Features


the DC current gain for this device is 85 @ 500mA 1V
a collector emitter saturation voltage of 500mV
the vce saturation(Max) is 500mV @ 200mA, 2A
the emitter base voltage is kept at 5V
the current rating of this device is -4A
a transition frequency of 3MHz

BD436T Applications


There are a lot of ON Semiconductor BD436T applications of single BJT transistors.

  • Muting
  • Inverter
  • Driver
  • Interface

In Stock

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