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BD435G datasheet pdf and Transistors - Bipolar (BJT) - Single product details from ON Semiconductor stock available at Feilidi
- Manufacturer: ON Semiconductor
- NO: 598-BD435G
- Package: TO-225AA, TO-126-3
- Datasheet:
- Stock: 3372
- Description: BD435G datasheet pdf and Transistors - Bipolar (BJT) - Single product details from ON Semiconductor stock available at Feilidi(Kg)
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| Parameters | |
|---|---|
| Collector Emitter Breakdown Voltage | 32V |
| Transition Frequency | 3MHz |
| Collector Base Voltage (VCBO) | 32V |
| Emitter Base Voltage (VEBO) | 5V |
| hFE Min | 40 |
| Radiation Hardening | No |
| RoHS Status | ROHS3 Compliant |
| Lead Free | Lead Free |
| Factory Lead Time | 2 Weeks |
| Lifecycle Status | ACTIVE (Last Updated: 3 days ago) |
| Mounting Type | Through Hole |
| Package / Case | TO-225AA, TO-126-3 |
| Surface Mount | NO |
| Number of Pins | 3 |
| Transistor Element Material | SILICON |
| Operating Temperature | -55°C~150°C TJ |
| Packaging | Bulk |
| Published | 2003 |
| JESD-609 Code | e3 |
| Pbfree Code | yes |
| Part Status | Active |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
| Number of Terminations | 3 |
| ECCN Code | EAR99 |
| Terminal Finish | Tin (Sn) |
| Subcategory | Other Transistors |
| Voltage - Rated DC | 32V |
| Max Power Dissipation | 36W |
| Peak Reflow Temperature (Cel) | 260 |
| Current Rating | 4A |
| Frequency | 3MHz |
| Time@Peak Reflow Temperature-Max (s) | 40 |
| Base Part Number | BD435 |
| Pin Count | 3 |
| Number of Elements | 1 |
| Element Configuration | Single |
| Power Dissipation | 36W |
| Transistor Application | SWITCHING |
| Gain Bandwidth Product | 3MHz |
| Polarity/Channel Type | NPN |
| Transistor Type | NPN |
| Collector Emitter Voltage (VCEO) | 32V |
| Max Collector Current | 4A |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 85 @ 500mA 1V |
| Current - Collector Cutoff (Max) | 100μA ICBO |
| Vce Saturation (Max) @ Ib, Ic | 500mV @ 200mA, 2A |
BD435G Overview
As dc = Ic/Ib, DC current gain is the ratio of base current to collector current, and DC current gain for this device is 85 @ 500mA 1V.A VCE saturation (Max) of 500mV @ 200mA, 2A means Ic has reached its maximum value(saturated).The emitter base voltage can be kept at 5V for high efficiency.As defined by current rating, the maximum current a fuse can carry without deteriorating too much is 4A for this device.As you can see, the part has a transition frequency of 3MHz.Single BJT transistor is possible for the collector current to fall as low as 4A volts at Single BJT transistors maximum.
BD435G Features
the DC current gain for this device is 85 @ 500mA 1V
the vce saturation(Max) is 500mV @ 200mA, 2A
the emitter base voltage is kept at 5V
the current rating of this device is 4A
a transition frequency of 3MHz
BD435G Applications
There are a lot of ON Semiconductor BD435G applications of single BJT transistors.
- Muting
- Inverter
- Interface
- Driver
