BD435

BD435 datasheet pdf and Transistors - Bipolar (BJT) - Single product details from STMicroelectronics stock available at Feilidi


  • Manufacturer: STMicroelectronics
  • NO: 761-BD435
  • Package: TO-225AA, TO-126-3
  • Datasheet: pdf
  • Stock: 2288
  • Description: BD435 datasheet pdf and Transistors - Bipolar (BJT) - Single product details from STMicroelectronics stock available at Feilidi(Kg)

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SPECIFICATIONS

Parameters
Mount Through Hole
Mounting Type Through Hole
Package / Case TO-225AA, TO-126-3
Number of Pins 3
Transistor Element Material SILICON
Operating Temperature 150°C TJ
Packaging Tube
JESD-609 Code e3
Pbfree Code yes
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
ECCN Code EAR99
Terminal Finish Matte Tin (Sn)
Subcategory Other Transistors
Max Power Dissipation 36W
Frequency 3MHz
Base Part Number BD435
Pin Count 3
Number of Elements 1
Element Configuration Single
Power Dissipation 36W
Case Connection ISOLATED
Transistor Application SWITCHING
Gain Bandwidth Product 3MHz
Polarity/Channel Type NPN
Transistor Type NPN
Collector Emitter Voltage (VCEO) 32V
Max Collector Current 4A
DC Current Gain (hFE) (Min) @ Ic, Vce 40 @ 10mA 5V
Current - Collector Cutoff (Max) 100μA
Vce Saturation (Max) @ Ib, Ic 500mV @ 200mA, 2A
Collector Emitter Breakdown Voltage 32V
Transition Frequency 3MHz
Collector Emitter Saturation Voltage 200mV
Collector Base Voltage (VCBO) 32V
Emitter Base Voltage (VEBO) 5V
hFE Min 40
Radiation Hardening No
REACH SVHC No SVHC
RoHS Status ROHS3 Compliant
Lead Free Lead Free

BD435 Overview


DC current gain in this device equals 40 @ 10mA 5V, which is the ratio of the base current to the collector current.With a collector emitter saturation voltage of 200mV, it offers maximum design flexibility.Saturation of VCE means Ic is at its maximum value (saturated), and VCE saturation (Max) is 500mV @ 200mA, 2A.The emitter base voltage can be kept at 5V for high efficiency.The part has a transition frequency of 3MHz.During maximum operation, collector current can be as low as 4A volts.

BD435 Features


the DC current gain for this device is 40 @ 10mA 5V
a collector emitter saturation voltage of 200mV
the vce saturation(Max) is 500mV @ 200mA, 2A
the emitter base voltage is kept at 5V
a transition frequency of 3MHz

BD435 Applications


There are a lot of STMicroelectronics BD435 applications of single BJT transistors.

  • Muting
  • Interface
  • Driver
  • Inverter

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Please send RFQ , we will respond immediately.