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BD435 datasheet pdf and Transistors - Bipolar (BJT) - Single product details from ON Semiconductor stock available at Feilidi
- Manufacturer: ON Semiconductor
- NO: 598-BD435
- Package: TO-225AA, TO-126-3
- Datasheet:
- Stock: 3014
- Description: BD435 datasheet pdf and Transistors - Bipolar (BJT) - Single product details from ON Semiconductor stock available at Feilidi(Kg)
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| Parameters | |
|---|---|
| Min Operating Temperature | -55°C |
| Voltage - Rated DC | 32V |
| Max Power Dissipation | 36W |
| Current Rating | 4A |
| Frequency | 3MHz |
| Base Part Number | BD435 |
| Number of Elements | 1 |
| Polarity | NPN |
| Power Dissipation | 36W |
| Power - Max | 36W |
| Transistor Type | NPN |
| Collector Emitter Voltage (VCEO) | 500mV |
| Max Collector Current | 4A |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 85 @ 500mA 1V |
| Current - Collector Cutoff (Max) | 100μA ICBO |
| Vce Saturation (Max) @ Ib, Ic | 500mV @ 200mA, 2A |
| Collector Emitter Breakdown Voltage | 32V |
| Voltage - Collector Emitter Breakdown (Max) | 32V |
| Current - Collector (Ic) (Max) | 4A |
| Frequency - Transition | 3MHz |
| Collector Base Voltage (VCBO) | 32V |
| Emitter Base Voltage (VEBO) | 5V |
| RoHS Status | Non-RoHS Compliant |
| Lead Free | Contains Lead |
| Lifecycle Status | LAST SHIPMENTS (Last Updated: 2 days ago) |
| Mount | Through Hole |
| Mounting Type | Through Hole |
| Package / Case | TO-225AA, TO-126-3 |
| Number of Pins | 3 |
| Supplier Device Package | TO-225AA |
| Operating Temperature | -55°C~150°C TJ |
| Packaging | Bulk |
| Published | 2005 |
| Part Status | Obsolete |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
| Max Operating Temperature | 150°C |
BD435 Overview
In this device, the DC current gain is 85 @ 500mA 1V, which is the ratio between the base current and the collector current.Saturation of VCE means Ic is at its maximum value (saturated), and VCE saturation (Max) is 500mV @ 200mA, 2A.If the emitter base voltage is kept at 5V, a high level of efficiency can be achieved.This device has a current rating of 4A which corresponds to the maximum current it can carry for an indefinite period without deteriorating too much.Single BJT transistor comes in a supplier device package of TO-225AA.Device displays Collector Emitter Breakdown (32V maximal voltage).A maximum collector current of 4A volts can be achieved.
BD435 Features
the DC current gain for this device is 85 @ 500mA 1V
the vce saturation(Max) is 500mV @ 200mA, 2A
the emitter base voltage is kept at 5V
the current rating of this device is 4A
the supplier device package of TO-225AA
BD435 Applications
There are a lot of ON Semiconductor BD435 applications of single BJT transistors.
- Inverter
- Driver
- Muting
- Interface
