BD241C

BD241C datasheet pdf and Transistors - Bipolar (BJT) - Single product details from ON Semiconductor stock available at Feilidi


  • Manufacturer: ON Semiconductor
  • NO: 598-BD241C
  • Package: TO-220-3
  • Datasheet: pdf
  • Stock: 3843
  • Description: BD241C datasheet pdf and Transistors - Bipolar (BJT) - Single product details from ON Semiconductor stock available at Feilidi(Kg)

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SPECIFICATIONS

Parameters
Lifecycle Status OBSOLETE (Last Updated: 1 week ago)
Mount Surface Mount, Through Hole
Mounting Type Through Hole
Package / Case TO-220-3
Number of Pins 3
Supplier Device Package TO-220AB
Operating Temperature -65°C~150°C TJ
Packaging Tube
Published 2009
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Max Operating Temperature 150°C
Min Operating Temperature -65°C
Voltage - Rated DC 100V
Max Power Dissipation 40W
Current Rating 3A
Base Part Number BD241
Polarity NPN
Element Configuration Single
Power - Max 40W
Gain Bandwidth Product 3MHz
Transistor Type NPN
Collector Emitter Voltage (VCEO) 1.2V
Max Collector Current 3A
DC Current Gain (hFE) (Min) @ Ic, Vce 25 @ 1A 4V
Current - Collector Cutoff (Max) 300μA
Vce Saturation (Max) @ Ib, Ic 1.2V @ 600mA, 3A
Collector Emitter Breakdown Voltage 25V
Voltage - Collector Emitter Breakdown (Max) 100V
Current - Collector (Ic) (Max) 3A
Collector Emitter Saturation Voltage 1.2V
Max Breakdown Voltage 100V
Frequency - Transition 3MHz
Collector Base Voltage (VCBO) 90V
Emitter Base Voltage (VEBO) 5V
hFE Min 25
RoHS Status Non-RoHS Compliant
Lead Free Contains Lead

BD241C Overview


The DC current gain is the ratio of the base current to the collector current βdc = Ic/Ib and the DC current gain for this device is 25 @ 1A 4V.This system offers maximum design flexibility due to a collector emitter saturation voltage of 1.2V.A VCE saturation indicates a maximum value of Ic (saturation), and a maximum value of VCE saturation (Max).If the emitter base voltage is kept at 5V, a high level of efficiency can be achieved.This device has a current rating of 3A which corresponds to the maximum current it can carry for an indefinite period without deteriorating too much.The breakdown input voltage is 100V volts.TO-220AB is the supplier device package for this product.A 100V maximal voltage - Collector Emitter Breakdown is present in the device.When collector current reaches its maximum, it can reach 3A volts.

BD241C Features


the DC current gain for this device is 25 @ 1A 4V
a collector emitter saturation voltage of 1.2V
the vce saturation(Max) is 1.2V @ 600mA, 3A
the emitter base voltage is kept at 5V
the current rating of this device is 3A
the supplier device package of TO-220AB

BD241C Applications


There are a lot of ON Semiconductor BD241C applications of single BJT transistors.

  • Interface
  • Driver
  • Muting
  • Inverter

In Stock

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