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BD241BTU datasheet pdf and Transistors - Bipolar (BJT) - Single product details from ON Semiconductor stock available at Feilidi
- Manufacturer: ON Semiconductor
- NO: 598-BD241BTU
- Package: TO-220-3
- Datasheet:
- Stock: 7419
- Description: BD241BTU datasheet pdf and Transistors - Bipolar (BJT) - Single product details from ON Semiconductor stock available at Feilidi(Kg)
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| Parameters | |
|---|---|
| Mounting Type | Through Hole |
| Package / Case | TO-220-3 |
| Supplier Device Package | TO-220-3 |
| Operating Temperature | 150°C TJ |
| Packaging | Tube |
| Part Status | Obsolete |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
| Base Part Number | BD241 |
| Power - Max | 40W |
| Transistor Type | NPN |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 25 @ 1A 4V |
| Current - Collector Cutoff (Max) | 300μA |
| Vce Saturation (Max) @ Ib, Ic | 1.2V @ 600mA, 3A |
| Voltage - Collector Emitter Breakdown (Max) | 80V |
| Current - Collector (Ic) (Max) | 3A |
BD241BTU Overview
In this device, the DC current gain is 25 @ 1A 4V, which is calculated by taking the ratio of the base current to collector current and dividing transistor by two.When VCE saturation is 1.2V @ 600mA, 3A, transistor means Ic has reached transistors maximum value (saturated).Product comes in TO-220-3 supplier package.Single BJT transistor shows a 80V maximal voltage - Collector EmSingle BJT transistorter Breakdown.
BD241BTU Features
the DC current gain for this device is 25 @ 1A 4V
the vce saturation(Max) is 1.2V @ 600mA, 3A
the supplier device package of TO-220-3
BD241BTU Applications
There are a lot of ON Semiconductor BD241BTU applications of single BJT transistors.
- Inverter
- Interface
- Muting
- Driver
