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PNP-55°C~150°C TJ100μA ICBO1 Elements3 TerminationsSILICONPNPTO-225AA, TO-126-3BulkThrough Hole
- Manufacturer: ON Semiconductor
- NO: 598-BD238G
- Package: TO-225AA, TO-126-3
- Datasheet:
- Stock: 4338
- Description: PNP-55°C~150°C TJ100μA ICBO1 Elements3 TerminationsSILICONPNPTO-225AA, TO-126-3BulkThrough Hole(Kg)
- Delivery:
- Payment:
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| Parameters | |
|---|---|
| Lifecycle Status | LAST SHIPMENTS (Last Updated: 1 day ago) |
| Mounting Type | Through Hole |
| Package / Case | TO-225AA, TO-126-3 |
| Surface Mount | NO |
| Number of Pins | 3 |
| Transistor Element Material | SILICON |
| Operating Temperature | -55°C~150°C TJ |
| Packaging | Bulk |
| Published | 2003 |
| JESD-609 Code | e3 |
| Pbfree Code | yes |
| Part Status | Active |
| Moisture Sensitivity Level (MSL) | Not Applicable |
| Number of Terminations | 3 |
| ECCN Code | EAR99 |
| Terminal Finish | Tin (Sn) |
| Subcategory | Other Transistors |
| Max Power Dissipation | 25W |
| Peak Reflow Temperature (Cel) | 260 |
| Frequency | 3MHz |
| Time@Peak Reflow Temperature-Max (s) | 40 |
| Pin Count | 3 |
| Qualification Status | Not Qualified |
| Number of Elements | 1 |
| Element Configuration | Single |
| Power Dissipation | 25W |
| Transistor Application | AMPLIFIER |
| Gain Bandwidth Product | 3MHz |
| Polarity/Channel Type | PNP |
| Transistor Type | PNP |
| Collector Emitter Voltage (VCEO) | 80V |
| Max Collector Current | 2A |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 40 @ 150mA 2V |
| Current - Collector Cutoff (Max) | 100μA ICBO |
| Vce Saturation (Max) @ Ib, Ic | 600mV @ 100mA, 1A |
| Transition Frequency | 3MHz |
| Collector Emitter Saturation Voltage | 600mV |
| Collector Base Voltage (VCBO) | 100V |
| Emitter Base Voltage (VEBO) | 5V |
| hFE Min | 40 |
| RoHS Status | ROHS3 Compliant |
| Lead Free | Lead Free |
BD238G Overview
In this device, the DC current gain is 40 @ 150mA 2V, which is calculated by taking the ratio of the base current to collector current and dividing transistor by two.This system offers maximum design flexibility due to a collector emitter saturation voltage of 600mV.Single BJT transistor means that Ic is at Single BJT transistors maximum value (saturated), so the vce saturation(Max) is equal to 600mV @ 100mA, 1A.Single BJT transistor is possible to achieve a high level of efficiency by maintaining the emSingle BJT transistorter base voltage at 5V.3MHz is present in the transition frequency.Single BJT transistor is possible for the collector current to fall as low as 2A volts at Single BJT transistors maximum.
BD238G Features
the DC current gain for this device is 40 @ 150mA 2V
a collector emitter saturation voltage of 600mV
the vce saturation(Max) is 600mV @ 100mA, 1A
the emitter base voltage is kept at 5V
a transition frequency of 3MHz
BD238G Applications
There are a lot of ON Semiconductor BD238G applications of single BJT transistors.
- Interface
- Inverter
- Driver
- Muting
