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BD234G datasheet pdf and Transistors - Bipolar (BJT) - Single product details from ON Semiconductor stock available at Feilidi
- Manufacturer: ON Semiconductor
- NO: 598-BD234G
- Package: TO-225AA, TO-126-3
- Datasheet:
- Stock: 9314
- Description: BD234G datasheet pdf and Transistors - Bipolar (BJT) - Single product details from ON Semiconductor stock available at Feilidi(Kg)
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| Parameters | |
|---|---|
| Power Dissipation | 25W |
| Transistor Application | AMPLIFIER |
| Gain Bandwidth Product | 3MHz |
| Polarity/Channel Type | PNP |
| Transistor Type | PNP |
| Collector Emitter Voltage (VCEO) | 45V |
| Max Collector Current | 2A |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 25 @ 1A 2V |
| Current - Collector Cutoff (Max) | 100μA ICBO |
| Vce Saturation (Max) @ Ib, Ic | 600mV @ 100mA, 1A |
| Collector Emitter Breakdown Voltage | 45V |
| Transition Frequency | 3MHz |
| Collector Emitter Saturation Voltage | 600mV |
| Collector Base Voltage (VCBO) | 60V |
| Emitter Base Voltage (VEBO) | 5V |
| hFE Min | 40 |
| Radiation Hardening | No |
| RoHS Status | ROHS3 Compliant |
| Lead Free | Lead Free |
| Factory Lead Time | 2 Weeks |
| Lifecycle Status | ACTIVE (Last Updated: 6 days ago) |
| Mounting Type | Through Hole |
| Package / Case | TO-225AA, TO-126-3 |
| Surface Mount | NO |
| Number of Pins | 3 |
| Transistor Element Material | SILICON |
| Operating Temperature | -55°C~150°C TJ |
| Packaging | Bulk |
| Published | 2005 |
| JESD-609 Code | e3 |
| Pbfree Code | yes |
| Part Status | Active |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
| Number of Terminations | 3 |
| ECCN Code | EAR99 |
| Terminal Finish | Tin (Sn) |
| Subcategory | Other Transistors |
| Voltage - Rated DC | -45V |
| Max Power Dissipation | 25W |
| Peak Reflow Temperature (Cel) | 260 |
| Current Rating | -2A |
| Frequency | 3MHz |
| Time@Peak Reflow Temperature-Max (s) | 40 |
| Base Part Number | BD234 |
| Pin Count | 3 |
| Number of Elements | 1 |
| Element Configuration | Single |
BD234G Overview
As the DC current gain is the ratio of the collector current to the base current, for this device the DC current gain is 25 @ 1A 2V.This system offers maximum design flexibility due to a collector emitter saturation voltage of 600mV.As a result of vce saturation, Ic reaches its maximum value (saturated), and vce saturation(Max) is 600mV @ 100mA, 1A.With the emitter base voltage set at 5V, an efficient operation can be achieved.Normally, a fuse's current rating refers to how much current it can carry without deteriorating too much, which in this case is -2A.In the part, the transition frequency is 3MHz.The maximum collector current is 2A volts.
BD234G Features
the DC current gain for this device is 25 @ 1A 2V
a collector emitter saturation voltage of 600mV
the vce saturation(Max) is 600mV @ 100mA, 1A
the emitter base voltage is kept at 5V
the current rating of this device is -2A
a transition frequency of 3MHz
BD234G Applications
There are a lot of ON Semiconductor BD234G applications of single BJT transistors.
- Driver
- Interface
- Muting
- Inverter
