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BD140-16 datasheet pdf and Transistors - Bipolar (BJT) - Single product details from STMicroelectronics stock available at Feilidi
- Manufacturer: STMicroelectronics
- NO: 761-BD140-16
- Package: TO-225AA, TO-126-3
- Datasheet:
- Stock: 354
- Description: BD140-16 datasheet pdf and Transistors - Bipolar (BJT) - Single product details from STMicroelectronics stock available at Feilidi(Kg)
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| Parameters | |
|---|---|
| Subcategory | Other Transistors |
| Max Power Dissipation | 1.25W |
| Base Part Number | BD140 |
| Number of Elements | 1 |
| Element Configuration | Single |
| Power Dissipation | 1.25W |
| Transistor Application | AMPLIFIER |
| Polarity/Channel Type | PNP |
| Transistor Type | PNP |
| Collector Emitter Voltage (VCEO) | -80V |
| Max Collector Current | -3A |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 40 @ 2V 150MA |
| Current - Collector Cutoff (Max) | 100nA ICBO |
| Vce Saturation (Max) @ Ib, Ic | 500mV @ 50mA, 500mA |
| Collector Emitter Breakdown Voltage | 80V |
| Current - Collector (Ic) (Max) | 1.5A |
| Transition Frequency | 75MHz |
| Collector Emitter Saturation Voltage | -500mV |
| Max Breakdown Voltage | 80V |
| Collector Base Voltage (VCBO) | -80V |
| Emitter Base Voltage (VEBO) | -5V |
| hFE Min | 25 |
| Max Junction Temperature (Tj) | 150°C |
| Height | 13.2mm |
| Length | 7.8mm |
| Width | 2.7mm |
| Radiation Hardening | No |
| REACH SVHC | No SVHC |
| RoHS Status | ROHS3 Compliant |
| Factory Lead Time | 8 Weeks |
| Lifecycle Status | ACTIVE (Last Updated: 6 months ago) |
| Contact Plating | Tin |
| Mount | Through Hole |
| Mounting Type | Through Hole |
| Package / Case | TO-225AA, TO-126-3 |
| Number of Pins | 3 |
| Transistor Element Material | SILICON |
| Manufacturer Package Identifier | SOT-32-0016114E |
| Operating Temperature | 150°C TJ |
| Packaging | Tube |
| JESD-609 Code | e3 |
| Part Status | Active |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
| Number of Terminations | 3 |
| ECCN Code | EAR99 |
BD140-16 Overview
DC current gain in this device equals 40 @ 2V 150MA, which is the ratio of the base current to the collector current.Single BJT transistor offers maximum design flexibilSingle BJT transistory wSingle BJT transistorh a collector emSingle BJT transistorter saturation voltage of -500mV.Saturation of VCE means Ic is at its maximum value (saturated), and VCE saturation (Max) is 500mV @ 50mA, 500mA.If the emitter base voltage is kept at -5V, a high level of efficiency can be achieved.There is a transition frequency of 75MHz in the part.Single BJT transistor can take a breakdown input voltage of 80V volts.Collector current can be as low as -3A volts at its maximum.
BD140-16 Features
the DC current gain for this device is 40 @ 2V 150MA
a collector emitter saturation voltage of -500mV
the vce saturation(Max) is 500mV @ 50mA, 500mA
the emitter base voltage is kept at -5V
a transition frequency of 75MHz
BD140-16 Applications
There are a lot of STMicroelectronics BD140-16 applications of single BJT transistors.
- Muting
- Driver
- Interface
- Inverter
