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BCX70H datasheet pdf and Transistors - Bipolar (BJT) - Single product details from ON Semiconductor stock available at Feilidi
- Manufacturer: ON Semiconductor
- NO: 598-BCX70H
- Package: TO-236-3, SC-59, SOT-23-3
- Datasheet:
- Stock: 3140
- Description: BCX70H datasheet pdf and Transistors - Bipolar (BJT) - Single product details from ON Semiconductor stock available at Feilidi(Kg)
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| Parameters | |
|---|---|
| Factory Lead Time | 14 Weeks |
| Lifecycle Status | LAST SHIPMENTS (Last Updated: 2 days ago) |
| Contact Plating | Tin |
| Mount | Surface Mount |
| Mounting Type | Surface Mount |
| Package / Case | TO-236-3, SC-59, SOT-23-3 |
| Number of Pins | 3 |
| Weight | 59.987591mg |
| Packaging | Tape & Reel (TR) |
| Published | 2002 |
| JESD-609 Code | e3 |
| Pbfree Code | yes |
| Part Status | Obsolete |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
| Number of Terminations | 3 |
| ECCN Code | EAR99 |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -65°C |
| Subcategory | Other Transistors |
| Voltage - Rated DC | 45V |
| Max Power Dissipation | 350mW |
| Terminal Position | DUAL |
| Terminal Form | GULL WING |
| Peak Reflow Temperature (Cel) | NOT SPECIFIED |
| Current Rating | 200mA |
| Frequency | 125MHz |
| Time@Peak Reflow Temperature-Max (s) | NOT SPECIFIED |
| Base Part Number | BCX70 |
| Qualification Status | Not Qualified |
| Number of Elements | 1 |
| Voltage | 45V |
| Element Configuration | Single |
| Current | 1A |
| Power Dissipation | 350mW |
| Gain Bandwidth Product | 250MHz |
| Polarity/Channel Type | NPN |
| Transistor Type | NPN |
| Collector Emitter Voltage (VCEO) | 45V |
| Max Collector Current | 200mA |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 180 @ 2mA 5V |
| Current - Collector Cutoff (Max) | 20nA |
| Vce Saturation (Max) @ Ib, Ic | 550mV @ 1.25mA, 50mA |
| Collector Emitter Breakdown Voltage | 45V |
| Transition Frequency | 125MHz |
| Collector Emitter Saturation Voltage | 550mV |
| Max Breakdown Voltage | 25V |
| Collector Base Voltage (VCBO) | 45V |
| Emitter Base Voltage (VEBO) | 5V |
| hFE Min | 180 |
| Turn Off Time-Max (toff) | 800ns |
| Height | 930μm |
| Length | 2.92mm |
| Width | 1.3mm |
| RoHS Status | RoHS Compliant |
| Lead Free | Lead Free |
BCX70H Overview
As the DC current gain is the ratio of the collector current to the base current, for this device the DC current gain is 180 @ 2mA 5V.Single BJT transistor has a collector emSingle BJT transistorter saturation voltage of 550mV, which allows maximum flexibilSingle BJT transistory in design.VCE saturation indicates Ic is at maximum level (saturated), whereas vce saturation (Max) indicates there is no saturation.The base voltage of the emitter can be kept at 5V to achieve high efficiency.This device has a current rating of 200mA which corresponds to the maximum current it can carry for an indefinite period without deteriorating too much.As you can see, the part has a transition frequency of 125MHz.Breakdown input voltage is 25V volts.In extreme cases, the collector current can be as low as 200mA volts.
BCX70H Features
the DC current gain for this device is 180 @ 2mA 5V
a collector emitter saturation voltage of 550mV
the vce saturation(Max) is 550mV @ 1.25mA, 50mA
the emitter base voltage is kept at 5V
the current rating of this device is 200mA
a transition frequency of 125MHz
BCX70H Applications
There are a lot of ON Semiconductor BCX70H applications of single BJT transistors.
- Interface
- Driver
- Inverter
- Muting
