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BCX70G datasheet pdf and Transistors - Bipolar (BJT) - Single product details from ON Semiconductor stock available at Feilidi
- Manufacturer: ON Semiconductor
- NO: 598-BCX70G
- Package: TO-236-3, SC-59, SOT-23-3
- Datasheet:
- Stock: 7810
- Description: BCX70G datasheet pdf and Transistors - Bipolar (BJT) - Single product details from ON Semiconductor stock available at Feilidi(Kg)
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| Parameters | |
|---|---|
| Collector Base Voltage (VCBO) | 45V |
| Emitter Base Voltage (VEBO) | 5V |
| hFE Min | 120 |
| Height | 6.35mm |
| Length | 6.35mm |
| Width | 6.35mm |
| Radiation Hardening | No |
| REACH SVHC | No SVHC |
| RoHS Status | RoHS Compliant |
| Lead Free | Lead Free |
| Factory Lead Time | 6 Weeks |
| Lifecycle Status | LAST SHIPMENTS (Last Updated: 2 days ago) |
| Contact Plating | Tin |
| Mount | Surface Mount |
| Mounting Type | Surface Mount |
| Package / Case | TO-236-3, SC-59, SOT-23-3 |
| Number of Pins | 3 |
| Weight | 30mg |
| Packaging | Tape & Reel (TR) |
| JESD-609 Code | e3 |
| Pbfree Code | yes |
| Part Status | Obsolete |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
| Termination | SMD/SMT |
| ECCN Code | EAR99 |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -65°C |
| Subcategory | Other Transistors |
| Voltage - Rated DC | 45V |
| Max Power Dissipation | 350mW |
| Current Rating | 200mA |
| Frequency | 125MHz |
| Base Part Number | BCX70 |
| Number of Elements | 1 |
| Element Configuration | Single |
| Power Dissipation | 350mW |
| Gain Bandwidth Product | 250MHz |
| Polarity/Channel Type | NPN |
| Transistor Type | NPN |
| Collector Emitter Voltage (VCEO) | 45V |
| Max Collector Current | 200mA |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 120 @ 2mA 5V |
| Current - Collector Cutoff (Max) | 20nA |
| Vce Saturation (Max) @ Ib, Ic | 550mV @ 1.25mA, 50mA |
| Collector Emitter Breakdown Voltage | 45V |
| Transition Frequency | 100MHz |
| Collector Emitter Saturation Voltage | 550mV |
| Max Breakdown Voltage | 45V |
BCX70G Overview
As explained above, DC current gain takes into account the rate at which the base current flows through the collector current; therefore, DC current gain for this device is 120 @ 2mA 5V.Single BJT transistor offers maximum design flexibilSingle BJT transistory wSingle BJT transistorh a collector emSingle BJT transistorter saturation voltage of 550mV.A VCE saturation indicates a maximum value of Ic (saturation), and a maximum value of VCE saturation (Max).An emitter's base voltage can be kept at 5V to gain high efficiency.As defined by current rating, the maximum current a fuse can carry without deteriorating too much is 200mA for this device.As you can see, the part has a transition frequency of 100MHz.Breakdown input voltage is 45V volts.Collector current can be as low as 200mA volts at its maximum.
BCX70G Features
the DC current gain for this device is 120 @ 2mA 5V
a collector emitter saturation voltage of 550mV
the vce saturation(Max) is 550mV @ 1.25mA, 50mA
the emitter base voltage is kept at 5V
the current rating of this device is 200mA
a transition frequency of 100MHz
BCX70G Applications
There are a lot of ON Semiconductor BCX70G applications of single BJT transistors.
- Muting
- Driver
- Inverter
- Interface
