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BCX5410TA datasheet pdf and Transistors - Bipolar (BJT) - Single product details from Diodes Incorporated stock available at Feilidi
- Manufacturer: Diodes Incorporated
- NO: 233-BCX5410TA
- Package: TO-243AA
- Datasheet:
- Stock: 3201
- Description: BCX5410TA datasheet pdf and Transistors - Bipolar (BJT) - Single product details from Diodes Incorporated stock available at Feilidi(Kg)
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| Parameters | |
|---|---|
| Factory Lead Time | 15 Weeks |
| Mount | Surface Mount |
| Mounting Type | Surface Mount |
| Package / Case | TO-243AA |
| Number of Pins | 4 |
| Weight | 51.993025mg |
| Transistor Element Material | SILICON |
| Operating Temperature | -65°C~150°C TJ |
| Packaging | Tape & Reel (TR) |
| Published | 2011 |
| JESD-609 Code | e3 |
| Pbfree Code | yes |
| Part Status | Active |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
| Number of Terminations | 3 |
| Terminal Finish | Matte Tin (Sn) |
| Additional Feature | HIGH RELIABILITY |
| Max Power Dissipation | 1W |
| Terminal Form | FLAT |
| Frequency | 150MHz |
| Base Part Number | BCX54 |
| Pin Count | 3 |
| JESD-30 Code | R-PSSO-F3 |
| Number of Elements | 1 |
| Element Configuration | Single |
| Power Dissipation | 1W |
| Case Connection | COLLECTOR |
| Transistor Application | SWITCHING |
| Gain Bandwidth Product | 150MHz |
| Polarity/Channel Type | NPN |
| Transistor Type | NPN |
| Collector Emitter Voltage (VCEO) | 45V |
| Max Collector Current | 1A |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 63 @ 150mA 2V |
| Current - Collector Cutoff (Max) | 100nA ICBO |
| Vce Saturation (Max) @ Ib, Ic | 500mV @ 50mA, 500mA |
| Collector Emitter Breakdown Voltage | 45V |
| Transition Frequency | 150MHz |
| Collector Emitter Saturation Voltage | 500mV |
| Max Breakdown Voltage | 45V |
| Collector Base Voltage (VCBO) | 45V |
| Emitter Base Voltage (VEBO) | 5V |
| hFE Min | 63 |
| Collector-Base Capacitance-Max | 25pF |
| Height | 1.6mm |
| Length | 4.6mm |
| Width | 2.6mm |
| Radiation Hardening | No |
| REACH SVHC | No SVHC |
| RoHS Status | ROHS3 Compliant |
| Lead Free | Lead Free |
BCX5410TA Overview
The DC current gain is the ratio of the base current to the collector current βdc = Ic/Ib and the DC current gain for this device is 63 @ 150mA 2V.The collector emitter saturation voltage is 500mV, giving you a wide variety of design options.When VCE saturation is 500mV @ 50mA, 500mA, transistor means Ic has reached transistors maximum value (saturated).The emitter base voltage can be kept at 5V for high efficiency.There is a transition frequency of 150MHz in the part.Single BJT transistor can take a breakdown input voltage of 45V volts.Single BJT transistor is possible to have a collector current as low as 1A volts at Single BJT transistors maximum.
BCX5410TA Features
the DC current gain for this device is 63 @ 150mA 2V
a collector emitter saturation voltage of 500mV
the vce saturation(Max) is 500mV @ 50mA, 500mA
the emitter base voltage is kept at 5V
a transition frequency of 150MHz
BCX5410TA Applications
There are a lot of Diodes Incorporated BCX5410TA applications of single BJT transistors.
- Driver
- Interface
- Inverter
- Muting
