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BCX41E6327HTSA1 datasheet pdf and Transistors - Bipolar (BJT) - Single product details from Infineon Technologies stock available at Feilidi
- Manufacturer: Infineon Technologies
- NO: 376-BCX41E6327HTSA1
- Package: TO-236-3, SC-59, SOT-23-3
- Datasheet:
- Stock: 7049
- Description: BCX41E6327HTSA1 datasheet pdf and Transistors - Bipolar (BJT) - Single product details from Infineon Technologies stock available at Feilidi(Kg)
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| Parameters | |
|---|---|
| Factory Lead Time | 4 Weeks |
| Mount | Surface Mount |
| Mounting Type | Surface Mount |
| Package / Case | TO-236-3, SC-59, SOT-23-3 |
| Number of Pins | 3 |
| Transistor Element Material | SILICON |
| Operating Temperature | 150°C TJ |
| Packaging | Tape & Reel (TR) |
| Published | 2011 |
| JESD-609 Code | e3 |
| Pbfree Code | yes |
| Part Status | Last Time Buy |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
| Number of Terminations | 3 |
| ECCN Code | EAR99 |
| Terminal Finish | Tin (Sn) |
| Voltage - Rated DC | 125V |
| Max Power Dissipation | 330mW |
| Terminal Position | DUAL |
| Terminal Form | GULL WING |
| Current Rating | 800mA |
| Frequency | 100MHz |
| Base Part Number | BCX41 |
| Number of Elements | 1 |
| Voltage | 125V |
| Element Configuration | Single |
| Current | 8A |
| Power Dissipation | 330mW |
| Transistor Application | SWITCHING |
| Halogen Free | Not Halogen Free |
| Polarity/Channel Type | NPN |
| Transistor Type | NPN |
| Collector Emitter Voltage (VCEO) | 1V |
| Max Collector Current | 800mA |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 40 @ 200mA 1V |
| Current - Collector Cutoff (Max) | 10μA |
| Vce Saturation (Max) @ Ib, Ic | 900mV @ 30mA, 300mA |
| Collector Emitter Breakdown Voltage | 125V |
| Transition Frequency | 100MHz |
| Collector Emitter Saturation Voltage | 900mV |
| Max Breakdown Voltage | 125V |
| Collector Base Voltage (VCBO) | 125V |
| Emitter Base Voltage (VEBO) | 5V |
| hFE Min | 63 |
| Height | 900μm |
| Length | 2.9mm |
| Width | 1.3mm |
| Radiation Hardening | No |
| RoHS Status | ROHS3 Compliant |
| Lead Free | Lead Free |
BCX41E6327HTSA1 Overview
As dc = Ic/Ib, DC current gain is the ratio of base current to collector current, and DC current gain for this device is 40 @ 200mA 1V.A collector emitter saturation voltage of 900mV allows maximum design flexibility.Single BJT transistor means that Ic is at Single BJT transistors maximum value (saturated), so the vce saturation(Max) is equal to 900mV @ 30mA, 300mA.The emitter base voltage can be kept at 5V for high efficiency.Current rating refers to the maximum current a fuse can carry for an indefinite period without deteriorating substantially, and this device has a 800mA current rating.Single BJT transistor contains a transSingle BJT transistorion frequency of 100MHz.Single BJT transistor can take a breakdown input voltage of 125V volts.During maximum operation, collector current can be as low as 800mA volts.
BCX41E6327HTSA1 Features
the DC current gain for this device is 40 @ 200mA 1V
a collector emitter saturation voltage of 900mV
the vce saturation(Max) is 900mV @ 30mA, 300mA
the emitter base voltage is kept at 5V
the current rating of this device is 800mA
a transition frequency of 100MHz
BCX41E6327HTSA1 Applications
There are a lot of Infineon Technologies BCX41E6327HTSA1 applications of single BJT transistors.
- Driver
- Muting
- Inverter
- Interface
