BCX19T116

BCX19T116 datasheet pdf and Transistors - Bipolar (BJT) - Single product details from ROHM Semiconductor stock available at Feilidi


  • Manufacturer: ROHM Semiconductor
  • NO: 687-BCX19T116
  • Package: TO-236-3, SC-59, SOT-23-3
  • Datasheet: pdf
  • Stock: 556
  • Description: BCX19T116 datasheet pdf and Transistors - Bipolar (BJT) - Single product details from ROHM Semiconductor stock available at Feilidi(Kg)

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SPECIFICATIONS

Parameters
Factory Lead Time 13 Weeks
Contact Plating Copper, Silver, Tin
Mount Surface Mount
Mounting Type Surface Mount
Package / Case TO-236-3, SC-59, SOT-23-3
Number of Pins 3
Transistor Element Material SILICON
Operating Temperature 150°C TJ
Packaging Tape & Reel (TR)
Published 2007
JESD-609 Code e1
Pbfree Code yes
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
Termination SMD/SMT
ECCN Code EAR99
Terminal Finish TIN SILVER COPPER
HTS Code 8541.21.00.95
Subcategory Other Transistors
Voltage - Rated DC 45V
Max Power Dissipation 425mW
Terminal Position DUAL
Terminal Form GULL WING
Peak Reflow Temperature (Cel) 260
Current Rating 500mA
Time@Peak Reflow Temperature-Max (s) 10
Base Part Number BCX19
Number of Elements 1
Element Configuration Single
Power Dissipation 200mW
Power - Max 350mW
Transistor Application AMPLIFIER
Gain Bandwidth Product 250MHz
Polarity/Channel Type NPN
Transistor Type NPN
Collector Emitter Voltage (VCEO) 620mV
Max Collector Current 500mA
DC Current Gain (hFE) (Min) @ Ic, Vce 100 @ 100mA 1V
Current - Collector Cutoff (Max) 100nA ICBO
Vce Saturation (Max) @ Ib, Ic 620mV @ 50mA, 500mA
Collector Emitter Breakdown Voltage 45V
Transition Frequency 100MHz
Collector Emitter Saturation Voltage 620mV
Max Breakdown Voltage 45V
Collector Base Voltage (VCBO) 50V
Emitter Base Voltage (VEBO) 5V
hFE Min 40
Continuous Collector Current 500mA
VCEsat-Max 0.7 V
Radiation Hardening No
REACH SVHC No SVHC
RoHS Status ROHS3 Compliant
Lead Free Lead Free

BCX19T116 Overview


In this device, the DC current gain is 100 @ 100mA 1V, which is the ratio between the base current and the collector current.Single BJT transistor offers maximum design flexibilSingle BJT transistory wSingle BJT transistorh a collector emSingle BJT transistorter saturation voltage of 620mV.Saturation of VCE means Ic is at its maximum value (saturated), and VCE saturation (Max) is 620mV @ 50mA, 500mA.Single BJT transistor is essential to maintain the continuous collector voltage at 500mA to achieve high efficiency.With the emitter base voltage set at 5V, an efficient operation can be achieved.According to definition, current rating describes the maximum current a fuse can carry indefinitely without deteriorating too much, and this device has no current rating.In this part, there is a transition frequency of 100MHz.This device can take an input voltage of 45V volts before it breaks down.When collector current reaches its maximum, it can reach 500mA volts.

BCX19T116 Features


the DC current gain for this device is 100 @ 100mA 1V
a collector emitter saturation voltage of 620mV
the vce saturation(Max) is 620mV @ 50mA, 500mA
the emitter base voltage is kept at 5V
the current rating of this device is 500mA
a transition frequency of 100MHz

BCX19T116 Applications


There are a lot of ROHM Semiconductor BCX19T116 applications of single BJT transistors.

  • Interface
  • Muting
  • Driver
  • Inverter

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