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BCW89 datasheet pdf and Transistors - Bipolar (BJT) - Single product details from ON Semiconductor stock available at Feilidi
- Manufacturer: ON Semiconductor
- NO: 598-BCW89
- Package: TO-236-3, SC-59, SOT-23-3
- Datasheet:
- Stock: 542
- Description: BCW89 datasheet pdf and Transistors - Bipolar (BJT) - Single product details from ON Semiconductor stock available at Feilidi(Kg)
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| Parameters | |
|---|---|
| Factory Lead Time | 39 Weeks |
| Lifecycle Status | LAST SHIPMENTS (Last Updated: 2 days ago) |
| Contact Plating | Tin |
| Mount | Surface Mount |
| Mounting Type | Surface Mount |
| Package / Case | TO-236-3, SC-59, SOT-23-3 |
| Number of Pins | 3 |
| Weight | 30mg |
| Transistor Element Material | SILICON |
| Operating Temperature | -55°C~150°C TJ |
| Packaging | Tape & Reel (TR) |
| Published | 2003 |
| JESD-609 Code | e3 |
| Pbfree Code | yes |
| Part Status | Obsolete |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
| Number of Terminations | 3 |
| ECCN Code | EAR99 |
| Subcategory | Other Transistors |
| Voltage - Rated DC | -60V |
| Max Power Dissipation | 350mW |
| Terminal Position | DUAL |
| Terminal Form | GULL WING |
| Peak Reflow Temperature (Cel) | NOT SPECIFIED |
| Current Rating | 200mA |
| Time@Peak Reflow Temperature-Max (s) | NOT SPECIFIED |
| Base Part Number | BCW89 |
| Qualification Status | Not Qualified |
| Number of Elements | 1 |
| Element Configuration | Single |
| Power Dissipation | 350mW |
| Transistor Application | SWITCHING |
| Polarity/Channel Type | PNP |
| Transistor Type | PNP |
| Collector Emitter Voltage (VCEO) | 60V |
| Max Collector Current | 500mA |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 120 @ 2mA 5V |
| Current - Collector Cutoff (Max) | 100nA ICBO |
| Vce Saturation (Max) @ Ib, Ic | 300mV @ 500μA, 10mA |
| Collector Emitter Breakdown Voltage | 60V |
| Collector Emitter Saturation Voltage | -300mV |
| Max Breakdown Voltage | 60V |
| Collector Base Voltage (VCBO) | -60V |
| Emitter Base Voltage (VEBO) | -5V |
| hFE Min | 120 |
| Height | 930μm |
| Length | 2.92mm |
| Width | 1.3mm |
| REACH SVHC | No SVHC |
| RoHS Status | ROHS3 Compliant |
| Lead Free | Lead Free |
BCW89 Overview
In this device, the DC current gain is 120 @ 2mA 5V, which is the ratio between the base current and the collector current.The collector emitter saturation voltage is -300mV, which allows for maximum design flexibility.Single BJT transistor means that Ic is at Single BJT transistors maximum value (saturated), so the vce saturation(Max) is equal to 300mV @ 500μA, 10mA.Keeping the emitter base voltage at -5V allows for a high level of efficiency.As defined by current rating, the maximum current a fuse can carry without deteriorating too much is 200mA for this device.Breakdown input voltage is 60V volts.The maximum collector current is 500mA volts.
BCW89 Features
the DC current gain for this device is 120 @ 2mA 5V
a collector emitter saturation voltage of -300mV
the vce saturation(Max) is 300mV @ 500μA, 10mA
the emitter base voltage is kept at -5V
the current rating of this device is 200mA
BCW89 Applications
There are a lot of ON Semiconductor BCW89 applications of single BJT transistors.
- Muting
- Interface
- Driver
- Inverter
