BCW71

BCW71 datasheet pdf and Transistors - Bipolar (BJT) - Single product details from ON Semiconductor stock available at Feilidi


  • Manufacturer: ON Semiconductor
  • NO: 598-BCW71
  • Package: TO-236-3, SC-59, SOT-23-3
  • Datasheet: pdf
  • Stock: 4508
  • Description: BCW71 datasheet pdf and Transistors - Bipolar (BJT) - Single product details from ON Semiconductor stock available at Feilidi(Kg)

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SPECIFICATIONS

Parameters
REACH SVHC No SVHC
RoHS Status ROHS3 Compliant
Lead Free Lead Free
Factory Lead Time 39 Weeks
Lifecycle Status ACTIVE (Last Updated: 2 days ago)
Contact Plating Tin
Mount Surface Mount
Mounting Type Surface Mount
Package / Case TO-236-3, SC-59, SOT-23-3
Number of Pins 3
Weight 30mg
Transistor Element Material SILICON
Operating Temperature -55°C~150°C TJ
Packaging Tape & Reel (TR)
Published 2000
JESD-609 Code e3
Pbfree Code yes
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
ECCN Code EAR99
Subcategory Other Transistors
Voltage - Rated DC 45V
Max Power Dissipation 350mW
Terminal Position DUAL
Terminal Form GULL WING
Current Rating 500mA
Frequency 330MHz
Base Part Number BCW71
Number of Elements 1
Element Configuration Single
Power Dissipation 350mW
Transistor Application AMPLIFIER
Gain Bandwidth Product 330MHz
Polarity/Channel Type NPN
Transistor Type NPN
Collector Emitter Voltage (VCEO) 45V
Max Collector Current 500mA
DC Current Gain (hFE) (Min) @ Ic, Vce 110 @ 2mA 5V
Current - Collector Cutoff (Max) 100μA ICBO
Vce Saturation (Max) @ Ib, Ic 250mV @ 500μA, 10mA
Collector Emitter Breakdown Voltage 45V
Transition Frequency 330MHz
Collector Emitter Saturation Voltage 250mV
Max Breakdown Voltage 45V
Collector Base Voltage (VCBO) 50V
Emitter Base Voltage (VEBO) 5V
hFE Min 110
Height 930μm
Length 2.92mm
Width 1.3mm
Radiation Hardening No

BCW71 Overview


This device has a DC current gain of 110 @ 2mA 5V, which is the ratio between the collector current and the base current.A collector emitter saturation voltage of 250mV allows maximum design flexibility.Single BJT transistor means that Ic is at Single BJT transistors maximum value (saturated), so the vce saturation(Max) is equal to 250mV @ 500μA, 10mA.The base voltage of the emitter can be kept at 5V to achieve high efficiency.The current rating of this fuse is 500mA, which means that transistor can carry an indefintransistore amount of current wtransistorhout deteriorating too much.As a result, the part has a transition frequency of 330MHz.There is a breakdown input voltage of 45V volts that it can take.Single BJT transistor is possible to have a collector current as low as 500mA volts at Single BJT transistors maximum.

BCW71 Features


the DC current gain for this device is 110 @ 2mA 5V
a collector emitter saturation voltage of 250mV
the vce saturation(Max) is 250mV @ 500μA, 10mA
the emitter base voltage is kept at 5V
the current rating of this device is 500mA
a transition frequency of 330MHz

BCW71 Applications


There are a lot of ON Semiconductor BCW71 applications of single BJT transistors.

  • Muting
  • Interface
  • Driver
  • Inverter

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