BCW68HVL

BCW68HVL datasheet pdf and Transistors - Bipolar (BJT) - Single product details from Nexperia USA Inc. stock available at Feilidi


  • Manufacturer: Nexperia USA Inc.
  • NO: 554-BCW68HVL
  • Package: TO-236-3, SC-59, SOT-23-3
  • Datasheet: pdf
  • Stock: 6059
  • Description: BCW68HVL datasheet pdf and Transistors - Bipolar (BJT) - Single product details from Nexperia USA Inc. stock available at Feilidi(Kg)

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SPECIFICATIONS

Parameters
Factory Lead Time 4 Weeks
Mounting Type Surface Mount
Package / Case TO-236-3, SC-59, SOT-23-3
Operating Temperature 150°C TJ
Packaging Tape & Reel (TR)
Published 2017
Series Automotive, AEC-Q101
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Pin Count 3
Power - Max 250mW
Transistor Type PNP
DC Current Gain (hFE) (Min) @ Ic, Vce 250 @ 100mA 1V
Current - Collector Cutoff (Max) 5μA ICBO
Vce Saturation (Max) @ Ib, Ic 450mV @ 50mA, 500mA
Voltage - Collector Emitter Breakdown (Max) 45V
Current - Collector (Ic) (Max) 800mA
Frequency - Transition 80MHz
RoHS Status ROHS3 Compliant

BCW68HVL Overview


As dc = Ic/Ib, DC current gain is the ratio of base current to collector current, and DC current gain for this device is 250 @ 100mA 1V.When VCE saturation is 450mV @ 50mA, 500mA, transistor means Ic has reached transistors maximum value (saturated).Collector Emitter Breakdown occurs at 45VV - Maximum voltage.

BCW68HVL Features


the DC current gain for this device is 250 @ 100mA 1V
the vce saturation(Max) is 450mV @ 50mA, 500mA

BCW68HVL Applications


There are a lot of Nexperia USA Inc. BCW68HVL applications of single BJT transistors.

  • Muting
  • Interface
  • Driver
  • Inverter

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