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BCW68HE6327HTSA1 datasheet pdf and Transistors - Bipolar (BJT) - Single product details from Infineon Technologies stock available at Feilidi
- Manufacturer: Infineon Technologies
- NO: 376-BCW68HE6327HTSA1
- Package: TO-236-3, SC-59, SOT-23-3
- Datasheet:
- Stock: 1922
- Description: BCW68HE6327HTSA1 datasheet pdf and Transistors - Bipolar (BJT) - Single product details from Infineon Technologies stock available at Feilidi(Kg)
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| Parameters | |
|---|---|
| Factory Lead Time | 4 Weeks |
| Mount | Surface Mount |
| Mounting Type | Surface Mount |
| Package / Case | TO-236-3, SC-59, SOT-23-3 |
| Number of Pins | 3 |
| Transistor Element Material | SILICON |
| Operating Temperature | 150°C TJ |
| Packaging | Tape & Reel (TR) |
| Published | 1996 |
| JESD-609 Code | e3 |
| Pbfree Code | yes |
| Part Status | Last Time Buy |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
| Number of Terminations | 3 |
| ECCN Code | EAR99 |
| Terminal Finish | Tin (Sn) |
| Voltage - Rated DC | -45V |
| Max Power Dissipation | 330mW |
| Terminal Position | DUAL |
| Terminal Form | GULL WING |
| Current Rating | -800mA |
| Frequency | 200MHz |
| Base Part Number | BCW68 |
| Number of Elements | 1 |
| Configuration | SINGLE |
| Power Dissipation | 330mW |
| Halogen Free | Not Halogen Free |
| Polarity/Channel Type | PNP |
| Transistor Type | PNP |
| Collector Emitter Voltage (VCEO) | 700mV |
| Max Collector Current | 800mA |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 250 @ 100mA 1V |
| Current - Collector Cutoff (Max) | 20nA ICBO |
| Vce Saturation (Max) @ Ib, Ic | 700mV @ 50mA, 500mA |
| Collector Emitter Breakdown Voltage | 45V |
| Transition Frequency | 200MHz |
| Max Breakdown Voltage | 45V |
| Collector Base Voltage (VCBO) | 60V |
| Emitter Base Voltage (VEBO) | 2V |
| Radiation Hardening | No |
| RoHS Status | ROHS3 Compliant |
| Lead Free | Lead Free |
BCW68HE6327HTSA1 Overview
The DC current gain is the ratio of the base current to the collector current βdc = Ic/Ib and the DC current gain for this device is 250 @ 100mA 1V.Single BJT transistor means that Ic is at Single BJT transistors maximum value (saturated), so the vce saturation(Max) is equal to 700mV @ 50mA, 500mA.The emitter base voltage can be kept at 2V for high efficiency.In definition, current rating refers to the maximum current a fuse can carry for an indefinite period without deteriorating too much, and the current rating of this device is -800mA.Parts of this part have transition frequencies of 200MHz.There is a breakdown input voltage of 45V volts that it can take.Maximum collector currents can be below 800mA volts.
BCW68HE6327HTSA1 Features
the DC current gain for this device is 250 @ 100mA 1V
the vce saturation(Max) is 700mV @ 50mA, 500mA
the emitter base voltage is kept at 2V
the current rating of this device is -800mA
a transition frequency of 200MHz
BCW68HE6327HTSA1 Applications
There are a lot of Infineon Technologies BCW68HE6327HTSA1 applications of single BJT transistors.
- Driver
- Inverter
- Interface
- Muting
