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BCW68FE6327HTSA1 datasheet pdf and Transistors - Bipolar (BJT) - Single product details from Infineon Technologies stock available at Feilidi
- Manufacturer: Infineon Technologies
- NO: 376-BCW68FE6327HTSA1
- Package: TO-236-3, SC-59, SOT-23-3
- Datasheet:
- Stock: 9406
- Description: BCW68FE6327HTSA1 datasheet pdf and Transistors - Bipolar (BJT) - Single product details from Infineon Technologies stock available at Feilidi(Kg)
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| Parameters | |
|---|---|
| Lead Free | Lead Free |
| Contact Plating | Tin |
| Mount | Surface Mount |
| Mounting Type | Surface Mount |
| Package / Case | TO-236-3, SC-59, SOT-23-3 |
| Number of Pins | 3 |
| Transistor Element Material | SILICON |
| Operating Temperature | 150°C TJ |
| Packaging | Tape & Reel (TR) |
| Published | 2002 |
| JESD-609 Code | e3 |
| Pbfree Code | yes |
| Part Status | Not For New Designs |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
| Number of Terminations | 3 |
| ECCN Code | EAR99 |
| Voltage - Rated DC | -45V |
| Max Power Dissipation | 330mW |
| Terminal Position | DUAL |
| Terminal Form | GULL WING |
| Current Rating | -800mA |
| Frequency | 200MHz |
| Base Part Number | BCW68 |
| Number of Elements | 1 |
| Configuration | SINGLE |
| Power Dissipation | 330mW |
| Halogen Free | Not Halogen Free |
| Polarity/Channel Type | PNP |
| Transistor Type | PNP |
| Collector Emitter Voltage (VCEO) | 700mV |
| Max Collector Current | 800mA |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 100 @ 100mA 1V |
| Current - Collector Cutoff (Max) | 20nA ICBO |
| Vce Saturation (Max) @ Ib, Ic | 700mV @ 50mA, 500mA |
| Collector Emitter Breakdown Voltage | 45V |
| Current - Collector (Ic) (Max) | 800mA |
| Transition Frequency | 200MHz |
| Collector Base Voltage (VCBO) | 60V |
| Emitter Base Voltage (VEBO) | 2V |
| Radiation Hardening | No |
| RoHS Status | ROHS3 Compliant |
BCW68FE6327HTSA1 Overview
DC current gain in this device equals 100 @ 100mA 1V, which is the ratio of the base current to the collector current.Vce saturation?means Ic is at its maximum value(saturated), and the vce saturation(Max) is 700mV @ 50mA, 500mA.Single BJT transistor is possible to achieve a high level of efficiency by maintaining the emSingle BJT transistorter base voltage at 2V.Normally, a fuse's current rating refers to how much current it can carry without deteriorating too much, which in this case is -800mA.In this part, there is a transition frequency of 200MHz.During maximum operation, collector current can be as low as 800mA volts.
BCW68FE6327HTSA1 Features
the DC current gain for this device is 100 @ 100mA 1V
the vce saturation(Max) is 700mV @ 50mA, 500mA
the emitter base voltage is kept at 2V
the current rating of this device is -800mA
a transition frequency of 200MHz
BCW68FE6327HTSA1 Applications
There are a lot of Infineon Technologies BCW68FE6327HTSA1 applications of single BJT transistors.
- Inverter
- Driver
- Interface
- Muting
