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BCW66KHB6327HTLA1 datasheet pdf and Transistors - Bipolar (BJT) - Single product details from Infineon Technologies stock available at Feilidi
- Manufacturer: Infineon Technologies
- NO: 376-BCW66KHB6327HTLA1
- Package: TO-236-3, SC-59, SOT-23-3
- Datasheet:
- Stock: 2171
- Description: BCW66KHB6327HTLA1 datasheet pdf and Transistors - Bipolar (BJT) - Single product details from Infineon Technologies stock available at Feilidi(Kg)
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| Parameters | |
|---|---|
| Contact Plating | Tin |
| Mount | Surface Mount |
| Mounting Type | Surface Mount |
| Package / Case | TO-236-3, SC-59, SOT-23-3 |
| Number of Pins | 3 |
| Transistor Element Material | SILICON |
| Operating Temperature | 150°C TJ |
| Packaging | Tape & Reel (TR) |
| Published | 2007 |
| Part Status | Obsolete |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
| Number of Terminations | 3 |
| ECCN Code | EAR99 |
| Max Power Dissipation | 500mW |
| Terminal Position | DUAL |
| Terminal Form | GULL WING |
| Peak Reflow Temperature (Cel) | NOT SPECIFIED |
| Frequency | 170MHz |
| Time@Peak Reflow Temperature-Max (s) | NOT SPECIFIED |
| Base Part Number | BCW66 |
| Number of Elements | 1 |
| Configuration | SINGLE |
| Power Dissipation | 500mW |
| Transistor Application | AMPLIFIER |
| Polarity/Channel Type | NPN |
| Transistor Type | NPN |
| Collector Emitter Voltage (VCEO) | 45V |
| Max Collector Current | 800mA |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 250 @ 100mA 1V |
| Current - Collector Cutoff (Max) | 20nA ICBO |
| Vce Saturation (Max) @ Ib, Ic | 450mV @ 50mA, 500mA |
| Collector Emitter Breakdown Voltage | 45V |
| Current - Collector (Ic) (Max) | 800mA |
| Transition Frequency | 170MHz |
| Collector Base Voltage (VCBO) | 75V |
| Emitter Base Voltage (VEBO) | 5V |
| RoHS Status | RoHS Compliant |
BCW66KHB6327HTLA1 Overview
This device has a DC current gain of 250 @ 100mA 1V, which is the ratio between the base current and the collector current.VCE saturation indicates Ic is at maximum level (saturated), whereas vce saturation (Max) indicates there is no saturation.Keeping the emitter base voltage at 5V allows for a high level of efficiency.In the part, the transition frequency is 170MHz.Single BJT transistor is possible for the collector current to fall as low as 800mA volts at Single BJT transistors maximum.
BCW66KHB6327HTLA1 Features
the DC current gain for this device is 250 @ 100mA 1V
the vce saturation(Max) is 450mV @ 50mA, 500mA
the emitter base voltage is kept at 5V
a transition frequency of 170MHz
BCW66KHB6327HTLA1 Applications
There are a lot of Infineon Technologies BCW66KHB6327HTLA1 applications of single BJT transistors.
- Muting
- Interface
- Driver
- Inverter
