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BCW65ALT1G datasheet pdf and Transistors - Bipolar (BJT) - Single product details from ON Semiconductor stock available at Feilidi
- Manufacturer: ON Semiconductor
- NO: 598-BCW65ALT1G
- Package: TO-236-3, SC-59, SOT-23-3
- Datasheet:
- Stock: 8698
- Description: BCW65ALT1G datasheet pdf and Transistors - Bipolar (BJT) - Single product details from ON Semiconductor stock available at Feilidi(Kg)
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| Parameters | |
|---|---|
| Factory Lead Time | 2 Weeks |
| Lifecycle Status | ACTIVE (Last Updated: 1 day ago) |
| Contact Plating | Tin |
| Mount | Surface Mount |
| Mounting Type | Surface Mount |
| Package / Case | TO-236-3, SC-59, SOT-23-3 |
| Number of Pins | 3 |
| Transistor Element Material | SILICON |
| Operating Temperature | -55°C~150°C TJ |
| Packaging | Tape & Reel (TR) |
| Published | 2005 |
| JESD-609 Code | e3 |
| Pbfree Code | yes |
| Part Status | Active |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
| Number of Terminations | 3 |
| ECCN Code | EAR99 |
| Subcategory | Other Transistors |
| Voltage - Rated DC | 32V |
| Max Power Dissipation | 225mW |
| Terminal Position | DUAL |
| Terminal Form | GULL WING |
| Peak Reflow Temperature (Cel) | 260 |
| Current Rating | 800mA |
| Frequency | 100MHz |
| Time@Peak Reflow Temperature-Max (s) | 40 |
| Base Part Number | BCW65 |
| Pin Count | 3 |
| Number of Elements | 1 |
| Element Configuration | Single |
| Power Dissipation | 300mW |
| Gain Bandwidth Product | 100MHz |
| Polarity/Channel Type | NPN |
| Transistor Type | NPN |
| Collector Emitter Voltage (VCEO) | 32V |
| Max Collector Current | 800mA |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 100 @ 100mA 1V |
| Current - Collector Cutoff (Max) | 20nA |
| Vce Saturation (Max) @ Ib, Ic | 700mV @ 50mA, 500mA |
| Collector Emitter Breakdown Voltage | 32V |
| Transition Frequency | 100MHz |
| Collector Emitter Saturation Voltage | 700mV |
| Max Breakdown Voltage | 32V |
| Collector Base Voltage (VCBO) | 60V |
| Emitter Base Voltage (VEBO) | 5V |
| hFE Min | 35 |
| Turn Off Time-Max (toff) | 400ns |
| Height | 1.11mm |
| Length | 3.04mm |
| Width | 2.64mm |
| Radiation Hardening | No |
| RoHS Status | ROHS3 Compliant |
| Lead Free | Lead Free |
BCW65ALT1G Overview
As the DC current gain is the ratio of the collector current to the base current, for this device the DC current gain is 100 @ 100mA 1V.A collector emitter saturation voltage of 700mV allows maximum design flexibility.VCE saturation indicates Ic is at maximum level (saturated), whereas vce saturation (Max) indicates there is no saturation.The emitter base voltage can be kept at 5V for high efficiency.According to definition, current rating describes the maximum current a fuse can carry indefinitely without deteriorating too much, and this device has no current rating.Parts of this part have transition frequencies of 100MHz.As a result, it can handle voltages as low as 32V volts.Single BJT transistor is possible for the collector current to fall as low as 800mA volts at Single BJT transistors maximum.
BCW65ALT1G Features
the DC current gain for this device is 100 @ 100mA 1V
a collector emitter saturation voltage of 700mV
the vce saturation(Max) is 700mV @ 50mA, 500mA
the emitter base voltage is kept at 5V
the current rating of this device is 800mA
a transition frequency of 100MHz
BCW65ALT1G Applications
There are a lot of ON Semiconductor BCW65ALT1G applications of single BJT transistors.
- Interface
- Muting
- Driver
- Inverter
