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BCW61DE6327HTSA1 datasheet pdf and Transistors - Bipolar (BJT) - Single product details from Infineon Technologies stock available at Feilidi
- Manufacturer: Infineon Technologies
- NO: 376-BCW61DE6327HTSA1
- Package: TO-236-3, SC-59, SOT-23-3
- Datasheet:
- Stock: 6054
- Description: BCW61DE6327HTSA1 datasheet pdf and Transistors - Bipolar (BJT) - Single product details from Infineon Technologies stock available at Feilidi(Kg)
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| Parameters | |
|---|---|
| Pbfree Code | yes |
| Part Status | Not For New Designs |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
| Number of Terminations | 3 |
| ECCN Code | EAR99 |
| Voltage - Rated DC | -32V |
| Max Power Dissipation | 330mW |
| Terminal Position | DUAL |
| Terminal Form | GULL WING |
| Current Rating | -100mA |
| Frequency | 250MHz |
| Base Part Number | BCW61 |
| Number of Elements | 1 |
| Element Configuration | Single |
| Power Dissipation | 330mW |
| Transistor Application | SWITCHING |
| Halogen Free | Not Halogen Free |
| Polarity/Channel Type | PNP |
| Transistor Type | PNP |
| Collector Emitter Voltage (VCEO) | 550mV |
| Max Collector Current | 100mA |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 380 @ 2mA 5V |
| Current - Collector Cutoff (Max) | 20nA ICBO |
| Vce Saturation (Max) @ Ib, Ic | 550mV @ 1.25mA, 50mA |
| Collector Emitter Breakdown Voltage | 32V |
| Transition Frequency | 250MHz |
| Collector Emitter Saturation Voltage | 550mV |
| Max Breakdown Voltage | 32V |
| Collector Base Voltage (VCBO) | 32V |
| Emitter Base Voltage (VEBO) | 5V |
| Height | 900μm |
| Length | 2.9mm |
| Width | 1.3mm |
| Radiation Hardening | No |
| RoHS Status | ROHS3 Compliant |
| Lead Free | Lead Free |
| Contact Plating | Tin |
| Mount | Surface Mount |
| Mounting Type | Surface Mount |
| Package / Case | TO-236-3, SC-59, SOT-23-3 |
| Number of Pins | 3 |
| Transistor Element Material | SILICON |
| Operating Temperature | 150°C TJ |
| Packaging | Tape & Reel (TR) |
| Published | 2011 |
| JESD-609 Code | e3 |
BCW61DE6327HTSA1 Overview
As explained above, DC current gain takes into account the rate at which the base current flows through the collector current; therefore, DC current gain for this device is 380 @ 2mA 5V.A collector emitter saturation voltage of 550mV allows maximum design flexibility.As a result of vce saturation, Ic reaches its maximum value (saturated), and vce saturation(Max) is 550mV @ 1.25mA, 50mA.If the emitter base voltage is kept at 5V, a high level of efficiency can be achieved.As defined by current rating, the maximum current a fuse can carry without deteriorating too much is -100mA for this device.Parts of this part have transition frequencies of 250MHz.Input voltage breakdown is available at 32V volts.During maximum operation, collector current can be as low as 100mA volts.
BCW61DE6327HTSA1 Features
the DC current gain for this device is 380 @ 2mA 5V
a collector emitter saturation voltage of 550mV
the vce saturation(Max) is 550mV @ 1.25mA, 50mA
the emitter base voltage is kept at 5V
the current rating of this device is -100mA
a transition frequency of 250MHz
BCW61DE6327HTSA1 Applications
There are a lot of Infineon Technologies BCW61DE6327HTSA1 applications of single BJT transistors.
- Interface
- Muting
- Inverter
- Driver
